Limits to model amphoteric defect recombination via SRH statistics

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 2, 2012, Pages 390-400

  Steingrube, S ^a   Brendel, R ^a,b   Altermatt, P P ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

amorphous silicon; amphoteric defects; Shockley Read Hall; solar cells

Indexed keywords

A-SI:H; AMORPHOUS SILICON (A-SI:H); BANDBENDING; CORRELATION ENERGY; CRYSTALLINE SILICONS; DEFECT DISTRIBUTION; DEFECT STATE; ENERGY DISTRIBUTIONS; EXCESS CARRIERS; FREE CARRIERS; ILLUMINATION LEVELS; NEUTRAL DEFECTS; P-N JUNCTION; QUASI-FERMI LEVEL; RECOMBINATION RATE; SELF-CONSISTENT MODEL; SEMICONDUCTOR DEVICE MODELING; SHOCKLEY-READ-HALL; SHOCKLEY-READ-HALL THEORIES; SI SOLAR CELLS; TRAPPED CARRIERS; TRAPPED CHARGE;

DEFECT DENSITY; SEMICONDUCTOR DEVICE MODELS; SILICON; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 84856299083     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127277     Document Type: Article

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