Quantum transport calculations for silicon inversion layers in MOS structures

Physica B: Condensed Matter

Volumn 227, Issue 1-4, 1996, Pages 333-335

  Vasileska, D ^a   Bordone, P ^b   Eldridge, T ^c   Ferry, D K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c McDonnell Douglas Helicopter Co   (United States)

Author keywords

Green's functions; Inversion layers; Mobility; Surface roughness; Universality

Indexed keywords

CALCULATIONS; EVALUATION; GREEN'S FUNCTION; SCATTERING; SILICON; SURFACE ROUGHNESS;

INVERSION LAYERS; UNIVERSALITY;

MOSFET DEVICES;

EID: 0030234561     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(96)00434-6     Document Type: Article

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