-
1
-
-
0031122158
-
CMOS scaling into the nanometer regime
-
Taur Y., Buchanan D.A., Chen W., Frank D.J., Ismail K.E., Lo S.H., SaiHalasz G.A., Viswanathan R.G., Wann H.J.C., Wind S.J., Wong H.S. CMOS scaling into the nanometer regime. Proc. IEEE. 85:(4):1997;486-504.
-
(1997)
Proc. IEEE
, vol.85
, Issue.4
, pp. 486-504
-
-
Taur, Y.1
Buchanan, D.A.2
Chen, W.3
Frank, D.J.4
Ismail, K.E.5
Lo, S.H.6
Saihalasz, G.A.7
Viswanathan, R.G.8
Wann, H.J.C.9
Wind, S.J.10
Wong, H.S.11
-
3
-
-
0001156050
-
Self-consistent results for n-type Si inversion layers
-
Stern F. Self-consistent results for n-type Si inversion layers. Phys. Rev. B. 5:(12):1972;4891.
-
(1972)
Phys. Rev. B
, vol.5
, Issue.12
, pp. 4891
-
-
Stern, F.1
-
4
-
-
0009050237
-
Influence of carrier energy quantization on threshold voltage of metal-oxide-semiconductor transistor
-
Janik T., Majkusiak B. Influence of carrier energy quantization on threshold voltage of metal-oxide-semiconductor transistor. J. Appl. Phys. 75:(10):1994;5186-5190.
-
(1994)
J. Appl. Phys.
, vol.75
, Issue.10
, pp. 5186-5190
-
-
Janik, T.1
Majkusiak, B.2
-
5
-
-
0031078966
-
Electron and hole quantization and their impact on deep submicron silicon p- And n-MOSFET characteristics
-
Jallepalli S., Bude J., Shih W.-K., Pinto M.R., Maziar C.M., Tasch A.F. Jr. Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics. IEEE Trans. Electron Devices. 44:(3):1997;297.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, Issue.3
, pp. 297
-
-
Jallepalli, S.1
Bude, J.2
Shih, W.-K.3
Pinto, M.R.4
Maziar, C.M.5
Tasch A.F., Jr.6
-
6
-
-
0032188387
-
Quantum effects upon drain current in a biased MOSFET
-
Ip B.K., Brews J.R. Quantum effects upon drain current in a biased MOSFET. IEEE Trans. Electron Devices. 45:(10):1998;2213-2221.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, Issue.10
, pp. 2213-2221
-
-
Ip, B.K.1
Brews, J.R.2
-
7
-
-
0026852922
-
Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFET's
-
Van Dort M.J., et al. Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFET's. IEEE Trans. Electron Devices. 39:(4):1992;932.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, Issue.4
, pp. 932
-
-
Van Dort, M.J.1
-
8
-
-
0031146748
-
Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layer
-
Chindalore C., Hareland S.A., Jallepalli S., Tasch F.A. Jr., Maziar C.M., Chia V.K.F., Smith S. Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layer. IEEE EDL. 18:(5):1997;206-208.
-
(1997)
IEEE EDL
, vol.18
, Issue.5
, pp. 206-208
-
-
Chindalore, C.1
Hareland, S.A.2
Jallepalli, S.3
Tasch F.A., Jr.4
Maziar, C.M.5
Chia, V.K.F.6
Smith, S.7
-
9
-
-
0032095761
-
Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model
-
Janik T., Majkusiak B. Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model. IEEE Trans. Electron Devices. 45:(6):1998;1263.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, Issue.6
, pp. 1263
-
-
Janik, T.1
Majkusiak, B.2
-
10
-
-
0031176039
-
Self-consistent solution of the Schrodinger equation in semiconductor devices by implicit iteration
-
Pacelli A. Self-consistent solution of the Schrodinger equation in semiconductor devices by implicit iteration. IEEE Trans. Electron Devices. 44:(7):1997;1169.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, Issue.7
, pp. 1169
-
-
Pacelli, A.1
-
11
-
-
0343219769
-
-
R. Rios, N.D. Arora, C.-L. Huang et al. A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications, IEDM95, 1995, p. 937.
-
(1995)
A Physical Compact MOSFET Model, Including Quantum Mechanical Effects, for Statistical Circuit Design Applications, Iedm95
, pp. 937
-
-
R. Rios N.D. Arora C.-L., Huang.1
-
12
-
-
0028396643
-
A simple model for quantization effects in heavily-doped silicon MOSFET's at inversion conditions
-
vanDort M.J., Woerlee P.H., Walker A.J. A simple model for quantization effects in heavily-doped silicon MOSFET's at inversion conditions. Solid-State Electron. 37:(3):1994;435.
-
(1994)
Solid-State Electron.
, vol.37
, Issue.3
, pp. 435
-
-
Vandort, M.J.1
Woerlee, P.H.2
Walker, A.J.3
-
13
-
-
0032122840
-
Computational efficient models for quantization effects in MOS electron and hole accumulation layers
-
Hareland S.A., Manassian M., Shin W.K., et al. Computational efficient models for quantization effects in MOS electron and hole accumulation layers. IEEE Trans. Electron Devices. 45:(7):1998;1487.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, Issue.7
, pp. 1487
-
-
Hareland, S.A.1
Manassian, M.2
Shin, W.K.3
-
14
-
-
0032625531
-
An Efficient and accurate compact model for thin-oxide-MOSFET intrinsic capacitance considering the finite charge layer thickness
-
Liu W., Jin X., King Y., Hu C. An Efficient and accurate compact model for thin-oxide-MOSFET intrinsic capacitance considering the finite charge layer thickness. IEEE Trans. Electron Devices. 46:(5):1999;1070.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, Issue.5
, pp. 1070
-
-
Liu, W.1
Jin, X.2
King, Y.3
Hu, C.4
-
15
-
-
0034159058
-
Effective density-of-states approach to QM correction in MOS structures
-
Ma Y., Li Z., Liu L., Tian L., Yu Z. effective density-of-states approach to QM correction in MOS structures. Solid-State Electronics. 44 (3):2000;40.
-
(2000)
Solid-State Electronics
, vol.443
, pp. 40
-
-
Ma, Y.1
Li, Z.2
Liu, L.3
Tian, L.4
Yu, Z.5
-
16
-
-
0034272951
-
Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer
-
in press
-
Y. Ma, L. Liu, Z. Yu, Z. Li, Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer, IEEE Trans. Electron Devices (2000), in press.
-
(2000)
IEEE Trans. Electron Devices
-
-
Ma, Y.1
Liu, L.2
Yu, Z.3
Li, Z.4
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