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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 1037-1040

Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements

(6) Favre, W a Labrune, M b,c Dadouche, F a Gudovskikh, A S d Roca I Cabarrocas, P b Kleider, J P a

a UNIV PARIS SUD (France)

b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

c TOTAL (France)

d RUSSIAN ACADEMY OF SCIENCES (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INVERSION LAYERS; NANOCRYSTALS;

CONDUCTANCE MEASUREMENT; CONDUCTION BAND OFFSET; CRYSTALLINE SILICONS; HETERO INTERFACES; INTERFACIAL PROPERTY; LOWER LIMITS; STRONG INVERSION; VALENCE BAND OFFSETS;

AMORPHOUS SILICON;

EID: 77952568344 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200982800 Document Type: Conference Paper

Times cited : (16)

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