Reliability issues of GaN based high voltage power devices

Microelectronics Reliability

Volumn 51, Issue 9-11, 2011, Pages 1710-1716

  Wuerfl, J ^a   Bahat Treidel, E ^a   Brunner, F ^a   Cho, E ^a   Hilt, O ^a   Ivo, P ^a   Knauer, A ^a   Kurpas, P ^a   Lossy, R ^a   Schulz, M ^a   Singwald, S ^a   Weyers, M ^a   Zhytnytska, R ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL LOCATION; DEGRADATION MECHANISM; DEVICE DESIGN; DEVICE OPERATIONS; DEVICE PERFORMANCE; ENGINEERING RELIABILITY; FAST SWITCHING; HIGH BREAKDOWN VOLTAGE; HIGH FIELD; HIGH VOLTAGE DEVICES; HIGH VOLTAGE POWER; HIGH-FIELD REGIONS; MATERIAL PROPERTY; MATERIAL QUALITY; ON-STATE RESISTANCE; PER UNIT; POWER DEVICES; RELIABILITY PROBLEMS; RESEARCH AND DEVELOPMENT; SPECIFIC MATERIALS; SWITCHING APPLICATIONS; THERMAL DESIGNS;

DEGRADATION; DESIGN; ELECTRIC EQUIPMENT; EPITAXIAL GROWTH; GALLIUM NITRIDE; PASSIVATION; POWER ELECTRONICS; RELIABILITY; TOPOLOGY;

EQUIPMENT;

EID: 80052937713     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.07.017     Document Type: Conference Paper

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