Charge trapping-detrapping induced resistive switching in Ba 0.7Sr0.3TiO3

AIP Advances

Volumn 2, Issue 3, 2012, Pages

  Zou, Xi ^a   Ong, Hock Guan ^a   You, Lu ^a   Chen, Weigang ^a   Ding, Hui ^a   Funakubo, Hiroshi ^b   Chen, Lang ^a   Wang, Junling ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DIGITAL STORAGE; SCHOTTKY BARRIER DIODES;

CHARGE TRAPPING/DETRAPPING; INTENSIVE RESEARCH; NON-VOLATILE MEMORY APPLICATION; OXIDE MATERIALS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SCHOTTKY BARRIERS; TRANSITIONAL METAL OXIDE;

SWITCHING;

EID: 84871274346     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4754150     Document Type: Article

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