Electric field penetration in Au/Nb: SrTiO3 Schottky junctions probed by bias-dependent internal photoemission

Applied Physics Letters

Volumn 98, Issue 19, 2011, Pages

  Hikita, Y ^a   Kawamura, M ^a   Bell, C ^a   Hwang, H Y ^a,b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BULK VALUE; DIELECTRIC PERMITTIVITIES; FIELD PENETRATION; INTERNAL PHOTOEMISSION; INTERNAL PHOTOEMISSION SPECTROSCOPIES; LINEAR REDUCTION; METALLIC SIDE; SCHOTTKY JUNCTIONS; SRTIO;

ELECTRIC FIELDS; EMISSION SPECTROSCOPY; PERMITTIVITY; PHOTOEMISSION; STRONTIUM ALLOYS; STRONTIUM TITANATES;

SEMICONDUCTOR JUNCTIONS;

EID: 79959627747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3589375     Document Type: Article

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