Hot forming to improve memory window and uniformity of low-power HfO x-based RRAMs

2012 4th IEEE International Memory Workshop, IMW 2012

Volumn , Issue , 2012, Pages

  Butcher, B ^a,b   Bersuker, G ^a   Young Fisher, K G ^a,c   Gilmer, D C ^a   Kalantarian, A ^a,d   Nishi, Y ^d   Geer, R ^b   Kirsch, P D ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c IBM MICROELECTRONICS   (United States)

^d STANFORD UNIVERSITY   (United States)

Author keywords

component; forming; HfOx; low power; ReRAM; RRAM

Indexed keywords

COMPONENT; HFOX; LOW POWER; RERAM; RRAM;

FORMING;

RANDOM ACCESS STORAGE;

EID: 84864141946     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2012.6213647     Document Type: Conference Paper

References (5)

1. Y.S. Chen et. al., "Challenges and opportunities for HfOX based resistive random access memory" Electron Devices Meeting (IEDM), IEEE International pp. 31.3.1-31.3.4 Dec 2011. 10.1109/IEDM.2011.6131649
2. rd IEEE international, pp 1-4, 22-25, May 2011. 10.1109/IMW.2011. 5873225
3. B. Butcher et al., "High endurance preformace of 1T1R HfOx based RRAM at low (<20μA) operative current and elevated (150C) temperature," IIRW IEEE Transactions in Device and Material Reliability (TDMR), pp. 146-150, 16-20. Oct. 2011. 10.1109/IIRW.2011.6142611
4. A. Kalantarian, et al., "Controlling Uniformity of RRAM Characteristics via the Forming Process," IRPS IEEE April 2012, Anaheim CA, USA. To be presented.
5. G. Bersuker, et al., "Metal oxide resistive memory switching mechanism based on conductive filament properties," Journal of Applied Physics, vol. 110, no. 12 pp124518, Dec. 2011. http://dx.doi.org/10.1063/1. 3671565