Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO:N bilayer stack channel layers

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1397-1399

  Liu, Po Tsun ^a   Chou, Yi Teh ^a   Teng, Li Feng ^a   Li, Fu Hai ^a   Fuh, Chur Shyang ^a   Shieh, Han Ping D ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

in situ back channel passivation (BCP); InGaZnO (IGZO); nitrogenated InGaZnO (IGZO:N)

Indexed keywords

AMBIENT OXYGEN; AMBIENT STABILITY; BACK CHANNELS; BI-LAYER; CHANNEL LAYERS; DEVICE STABILITY; IN-SITU; INGAZNO (IGZO); NITROGEN INCORPORATION; NITROGENATED INGAZNO (IGZO:N); OPTICAL ENERGY; STACK STRUCTURE;

AMORPHOUS FILMS; PASSIVATION;

THIN FILM TRANSISTORS;

EID: 80053563925     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2163181     Document Type: Article

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