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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1286-1289

1.45 μm intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy

(4) Mozume, Teruo a Yoshida, Haruhiko a Neogi, Arup a Kudo, Makoto b

a WASEDA UNIVERSITY (Japan)

b HITACHI LTD (Japan)

Author keywords

InGaAs AlAsSb; Intersubband absorption; Molecular beam epitaxy; Multiple quantum well

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL LATTICES; ELECTRON TRANSITIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM GALLIUM ARSENIDE; INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032674853 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1286 Document Type: Article

Times cited : (50)

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