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Nano Letters

Volumn 13, Issue 8, 2013, Pages 3463-3469

Gate-dependent carrier diffusion length in lead selenide quantum dot field-effect transistors

(6) Otto, Tyler a Miller, Chris a Tolentino, Jason b Liu, Yao c Law, Matt b,c Yu, Dong a

a UNIVERSITY OF CALIFORNIA (United States)

b University of California at Irvine (United States)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

carrier diffusion length; Colloidal quantum dots; field effect transistors; mobility; scanning photocurrent microscopy

Indexed keywords

CARRIER DIFFUSION LENGTH; COLLOIDAL QUANTUM DOTS; FIELD EFFECT TRANSISTOR (FETS); FRINGING ELECTRIC FIELD; LIFETIME MEASUREMENTS; MINORITY CARRIER LIFETIMES; NEGATIVE GATE VOLTAGES; SCANNING PHOTOCURRENT MICROSCOPIES;

AIR MOBILITY; ALUMINA; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; CARRIER MOBILITY; DIFFUSION; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; PHOTOCURRENTS; SEMICONDUCTOR QUANTUM DOTS; SODIUM COMPOUNDS;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 84881600958 PISSN: 15306984 EISSN: 15306992 Source Type: Journal
DOI: 10.1021/nl401698z Document Type: Article

Times cited : (31)

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