Photocurrent imaging of p-n junctions in ambipolar carbon nanotube transistors

Nano Letters

Volumn 7, Issue 11, 2007, Pages 3320-3323

  Ahn, Y H ^a   Tsen, A W ^b   Kim, Bio ^c   Park, Yung Woo ^c   Park, Jiwoong ^b,d  

^a Ajou University   (South Korea)

^b Department of Obstetrics Gynecology   (United States)

^c Seoul National University   (South Korea)

^d HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE TRANSISTORS; OPTOELECTRONIC PROPERTIES; PHOTOCURRENT IMAGING; SCANNING PHOTOCURRENT MICROSCOPY (SPCM);

CARBON NANOTUBES; ELECTRIC POTENTIAL; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS;

PHOTOTRANSISTORS;

EID: 36749087584     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl071536m     Document Type: Article

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