Imaging Schottky barriers and ohmic contacts in PbS quantum dot devices

Nano Letters

Volumn 12, Issue 2, 2012, Pages 569-575

  Strasfeld, David B ^a   Dorn, August ^b   Wanger, Darcy D ^a   Bawendi, Moungi G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

ohmic; Quantum dots; scanning photocurrent microscopy; Schottky

Indexed keywords

MICROSCOPY TECHNIQUE; OHMIC; OHMIC BEHAVIOR; PHOTO-VOLTAGE; PHOTOVOLTAIC PROPERTY; QUANTUM DOT; QUANTUM DOT DEVICES; SCHOTTKY; SCHOTTKY BARRIERS; VOLTAGE RANGES;

OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING LEAD COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

GOLD; LEAD; LEAD SULFIDE; QUANTUM DOT; SULFIDE; TITANIUM;

ARTICLE; CHEMISTRY; ELECTRODE; INSTRUMENTATION; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; SEMICONDUCTOR; SURFACE PROPERTY;

ELECTRODES; GOLD; LEAD; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; QUANTUM DOTS; SULFIDES; SURFACE PROPERTIES; TITANIUM; TRANSISTORS, ELECTRONIC;

EID: 84856957121     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204116b     Document Type: Article

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