Tuneable resistive switching characteristics of In2O3 nanorods array via Co doping

RSC Advances

Volumn 3, Issue 32, 2013, Pages 13422-13428

  Younis, Adnan ^a   Chu, Dewei ^a   Li, Sean ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; DATA RETENTION TIME; HIGH TEMPERATURE; HIGH UNIFORMITY; NANO-ROD ARRAYS; NANORODS ARRAYS; RESISTANCE RATIO; RESISTIVE SWITCHING;

SWITCHING SYSTEMS;

NANORODS;

EID: 84881534982     PISSN: None     EISSN: 20462069     Source Type: Journal    
DOI: 10.1039/c3ra41276h     Document Type: Article

References (31)

1. R. Waser et al., Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges Adv. Mater. 2009 21 25-26 2632 2663
2. R. A. A. M. Waser Nanoionics-based resistive switching memories Nat. Mater. 2007 6 833 840
3. 3 Gas Sensors Adv. Mater. 2007 19 12 1641 1645
4. K. Hara et al., Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells Sol. Energy Mater. Sol. Cells 2000 64 2 115 134
5. 3 thin films for organic light-emitting diodes Appl. Phys. Lett. 2001 78 8 1050 1052
6. 3 rod-like structures in metal-organic chemical vapor deposition process J. Mater. Sci. 2006 41 10 3189 3191
7. 3 Submicron/Nanostructures Using Chemical Vapor Deposition Cryst. Growth Des. 2009 9 5 2173 2178
8. A. Murali et al., Synthesis and Characterization of Indium Oxide Nanoparticles Nano Lett. 2001 1 6 287 289
9. 3 nanowires Appl. Phys. Lett. 2003 83 4 761 763
10. 3 nanowires and their optical properties Nanotechnology 2004 15 5 596
11. H. E. T. E. Swanson Natl. Bur. Stand. Circ. (U.S.) 1955 26 539
12. 2 nanoparticles Phys. Rev. B: Condens. Matter Mater. Phys. 2005 72 7 075203
13. D. Beena et al., Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films Appl. Surf. Sci. 2009 255 20 8334 8342
14. A. Manivannan et al., Magnetism of Co-doped titania thin films prepared by spray pyrolysis Appl. Phys. Lett. 2003 83 1 111 113
15. 2 thin films grown by reactive sputtering Appl. Phys. Lett. 2004 84 14 2608 2610
16. C. G. Van de Walle Hydrogen as a Cause of Doping in Zinc Oxide Phys. Rev. Lett. 2000 85 5 1012 1015
17. Y. Adnan C. Dewei L. Sean Oxygen level: the dominant of resistive switching characteristics in cerium oxide thin films J. Phys. D: Appl. Phys. 2012 45 35 355101
18. D. Chu A. Younis S. Li Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films ISRN Nanotechnol. 2012 2012 4
19. A. Younis D. Chu S. Li Bi-stable resistive switching characteristics in Ti-doped ZnO thin films Nanoscale Res. Lett. 2013 8 1 154
20. 4 nanosheets prepared by electrochemical deposition Nanoscale Res. Lett. 2013 8 1 36
21. W.-Y. Chang et al., Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications Appl. Phys. Lett. 2008 92 2 022110 3
22. 4 nanorod layers Solid State Commun. 2013 156 38 40
23. 2 nanotubes on transparent substrates and their resistive switching characteristics J. Phys. D: Appl. Phys. 2012 45 35 355306
24. J. R. Yeargan H. L. Taylor The Poole-Frenkel Effect with Compensation Present J. Appl. Phys. 1968 39 12 5600 5604
25. 2 thin films grown by atomic-layer deposition J. Appl. Phys. 2005 98 3 033715 10
26. S. Seo et al., Reproducible resistance switching in polycrystalline NiO films Appl. Phys. Lett. 2004 85 23 5655 5657
27. 3 Phys. Rev. Lett. 2002 88 7 075508
28. H.-Y. Lee et al., Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide Jpn. J. Appl. Phys. 2007 46 4B 2175 2179
29. H. Akinaga H. Shima Resistive Random Access Memory (ReRAM) Based on Metal Oxides Proc. IEEE 2010 98 12 2237 2251
30. B. J. F. K. Gao Y. S. Chen F. F. Zhang B. Chen P. Huang L. F. Liu X. Y. Liu Y. Y. Wang X. A. Tran Z. R. Wang H. Y. Yu A. Chin Tech. Dig.-Int. Electron Devices Meet. 2011 417 420
31. 3, Engineering shallow donor levels J. Appl. Phys. 2010 107 8 083704 5