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Solid State Communications

Volumn 156, Issue , 2013, Pages 38-40

Resistive switching behaviors in electrodeposited BaTiOF4 nanorod layers

(4) Chu, Dewei a Younis, Adnan a Teck Tan, Thiam a Li, Sean a

a UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

A. BaTiOF4; B. Electrodeposition; D. Resistive switching

Indexed keywords

A. BATIOF4; CONDUCTING FILAMENT; ELECTROCHEMICAL DEPOSITION PROCESS; NANOROD LAYERS; NON-VOLATILE MEMORY APPLICATION; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; VERTICALLY ALIGNED; WELL-ALIGNED;

ELECTRODEPOSITION; REDUCTION; SWITCHING SYSTEMS;

NANORODS;

EID: 84873582358 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2012.12.007 Document Type: Article

Times cited : (4)

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