Oxygen level: The dominant of resistive switching characteristics in cerium oxide thin films

Journal of Physics D: Applied Physics

Volumn 45, Issue 35, 2012, Pages

  Younis, Adnan ^a   Chu, Dewei ^a   Li, Sean ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; CERIUM OXIDES; GLASS STRUCTURE; METAL OXIDE THIN FILMS; OXYGEN CONCENTRATIONS; OXYGEN LEVELS; POST ANNEALING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; SWITCHING CHARACTERISTICS; X RAY PHOTONS;

CERIUM COMPOUNDS; METALLIC COMPOUNDS; OXYGEN; OXYGEN VACANCIES; SWITCHING; THIN FILMS;

SWITCHING SYSTEMS;

EID: 84865994117     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/35/355101     Document Type: Article

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