Laser processing of Al2O3/a-SiCx:H stacks: A feasible solution for the rear surface of high-efficiency p-type c-Si solar cells

Progress in Photovoltaics: Research and Applications

Volumn 21, Issue 5, 2013, Pages 1171-1175

  Martin I ^a   Ortega, P ^a   Colina, M ^a   Orpella, A ^a   Lopez G ^a   Alcubilla, R ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

Author keywords

c Si surface passivation; high efficiency; laser processed p+ regions; point contacts

Indexed keywords

CRYSTALLINE SILICONS; FEASIBLE SOLUTION; HIGH-EFFICIENCY SOLAR CELLS; LASER-PROCESSED P+ REGIONS; QUALITY SURFACES; RECOMBINATION VELOCITY; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

ALUMINUM; AMORPHOUS SILICON; COPYRIGHTS; DIELECTRIC FILMS; EFFICIENCY; ELECTRIC CONTACTORS; INFRARED LASERS; OHMIC CONTACTS; POINT CONTACTS; SILICON CARBIDE; SOLAR CELLS; VELOCITY;

SILICON;

EID: 84881235805     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2207     Document Type: Article

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