Analytical model for the diode saturation current of point-contacted solar cells

Progress in Photovoltaics: Research and Applications

Volumn 14, Issue 1, 2006, Pages 1-12

  Plagwitz, H ^a   Brendel, R ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

Amorphous silicon; Analytical model; Diode saturation current; Point contacts; Rear surface passivation

Indexed keywords

ELECTRIC CURRENTS; MATHEMATICAL MODELS; POINT CONTACTS; SOLAR CELLS; SURFACE PHENOMENA; TRANSPORT PROPERTIES; VELOCITY CONTROL;

ANALYTICAL MODELS; DIODE SATURATION CURRENTS; REAR SURFACE PASSIVATION;

DIODES;

EID: 31344436186     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.637     Document Type: Review

References (25)

1. Green MA, Blakers AW, Zhao J, Milne AM, Wang A, Dai X. Characterization of 23-percent efficient silicon solar cells. IEEE Transactions on Electron Devices 1990; 37: 331-336.
2. Aberle A, Warta W, Knobloch J, Voss B. Surface passivation of high efficiency silicon solar cells. Proceedings of the 21st IEEE Photovoltaic Specialists Conference, IEEE, New York, 1990; 233-238.
3. Zhao J, Wang A, Green MA. 24-5% efficiency silicon PERT cells on MCZ substrates and 24-7% efficiency PERL cells on FZ substrates. Progress in Photovollaics: Research and Applications 1999; 7: 471-474.
4. Glunz S. New concepts for high-efficiency silicon solar cells. Technical Digest of the 14th International Photovoltaic Science and Engineering Conference, Chulangkorn University, Bangkok, 2004; 631-634.
5. DESSIS. Simulation package from Integrated Systems Engineering AG, Zurich, Switzerland.
6. Rau U. Three dimensional simulation of the electrical transport in high efficiency solar cells. Proceedings of the 12th European Photovoltaic Solar Energy Conference, Hill R, Palz W, Helm P (eds). Stephens: Bedford, 1994; 1350-1353.
7. Fischer B. Loss Analysis of Crystalline Silicon Cells using Photoconductance and Quantum Efficiency Measurements. PhD Thesis, University of Konstanz. Cuvillier: Götingen, 2003; Chapter 2.3.
8. Basore P. Extended spectral analysis of internal quantum efficiency. Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, IEEE, New York, 1993; 147-152.
9. Green MA. Solar Cells. University of New South Wales: Kensington, 1992; Chapter 4.
10. Schöfthaler M, Rau U, Füssel W, Werner JH. Optimization of the back contact geometry for high efficiency solar cells. Procceedings of the 23rd IEEE Photovoltaic Specialists Conference, IEEE, New York, 1993; 315-320.
11. Catchpole KR, Blakers AW. Modelling of the PERC structure with stripe and dot back contacts. Proceedings of the 16th European Photovoltaic Solar Energy Conference, Scheer H, McNelis B, Palz W, Ossenbrink HA, Helm P (eds). Stephens: Bedford, 2000; 1719-1722.
12. Heiser G, Aberle AG, Wenham SR, Green MA. Two-dimensional numerical simulations of high-efficiency silicon solar cells. Microelectronics Journal 1995; 26: 273-286.
13. Brooks RD, Mattes HG. Spreading resistance between constant potential surfaces. Bell Systems Technical Journal 1971; 50: 775-785.
14. Kotsovos K, Misiakos K. Three-dimensional simulation of carrier transport effects in the base of rear point contact silicon solar cells. Journal of Applied Physics 2001; 89: 2491-2496.
15. Altermatt PP, Heiser G, Aberle AG, Wang A, Zhao J, Robinson SJ, Bowden S, Green MA. Spatially resolved analysis and minimization of resistive losses in high-efficiency Si solar cells. Progress in Photovoltaics: Research and Applications 1996; 4: 399-414.
16. Heiser G, Altermatt PP, Williams A, Sproul A, Green MA. Optimisation of rear contact geometry of high-efficiency silicon solar cells using three dimensional numerical modeling. Proceedings of the 13th European Photovoltaic Solar Energy Conference, Freiesleben W, Palz W, Ossenbrink HA, Helm P (eds). Stephens: Bedford, 1995; 447-450.
17. Plagwitz H, Nerding M, Ott N, Strunk HP, Brendel R. Low-temperature formation of local Al contacts to a-Si:H-passivated Si wafers. Progress in Photovoltaics: Research and Applications 2004; 12: 47-54.
18. Plagwitz H, Brendel R. COSIMA technology for screen-printed point contacts to the rear of passivated Si solar cells. Technical Digest of the 14th International Photovoltaic Science and Engineering Conference. Chulangkorn University: Bangkok, 2004; 267-268.
19. Luke KL, Cheng LJ. Analysis of the interaction of a laser pulse with a silicon wafer: determination of bulk lifetime and surface recombination velocity. Journal of Applied Physics 1987; 61: 2282-2293.
20. Kousik GS, Ling ZG, Ajmera PK. Nondestructive technique to measure bulk lifetime and surface recombination velocities at the two surfaces by infrared absorption due to pulsed optical excitation. Journal of Applied Physics 1992; 72: 141-146.
21. Schöfthaler M. Transiente Mikrowellenreflexion zur kontaktlosen Trägerlebensdauer in Silizium für Solarzellen. Shaker: Aachen, 1995.
22. Sproul AB, Green MA, Stephens AW. Accurate determination of minority carrier- and lattice scattering-mobility in silicon from photoconductance decay. Journal of Applied Physics 1992; 72: 4161-4171.
23. Kerr MJ, Cuevas A. General parametrization of Auger recombination in crystalline silicon. Journal of Applied Physics 2002; 91: 2473-2480.
24. Altermatt PP, Schenk A, Geelhaar F, Heiser G. Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing. Journal of Applied Physics 2003; 93: 1598-1604.
25. Zhao J. Recent advances of high-efficiency single crystalline silicon solar cells in processing technologies and substrate materials. Solar Energy Materials 2004; 82: 53-64.