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Volumn 108, Issue 12, 2010, Pages

Recombination at laser-processed local base contacts by dynamic infrared lifetime mapping

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; CONTACT FORMATION; CONTACT OPENING; HIGH EFFICIENCY; INPUT PARAMETER; LASER TREATMENT; LIFETIME MAPPING; METAL CONTACTS; METALLIZATIONS; NUMERICAL SIMULATION; P-TYPE; PRODUCTION COST; REVERSE-SATURATION CURRENTS; SI SOLAR CELLS;

EID: 78650860740     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3517109     Document Type: Article
Times cited : (34)

References (25)
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  • 2
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  • 3
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    • 1062-7995,. 10.1002/pi660
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    • (2006) Prog. Photovoltaics , vol.14 , pp. 195
    • Kray, D.1    Glunz, S.2
  • 16
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    • 0021-8979,. 10.1063/1.337938
    • K. L. Luke and L. Cheng, J. Appl. Phys. 0021-8979 61, 2282 (1987). 10.1063/1.337938
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    • Luke, K.L.1    Cheng, L.2
  • 19
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    • Cox, R.H.1    Strack, H.2
  • 21
    • 33845421788 scopus 로고    scopus 로고
    • General parameterization of Auger recombination in crystalline silicon
    • DOI 10.1063/1.1432476
    • M. J. Kerr and A. Cuevas, J. Appl. Phys. 0021-8979 91, 2473 (2002). 10.1063/1.1432476 (Pubitemid 34167776)
    • (2002) Journal of Applied Physics , vol.91 , Issue.4 , pp. 2473
    • Kerr, M.J.1    Cuevas, A.2
  • 23
    • 0001060922 scopus 로고
    • 0021-8979,. 10.1063/1.357521
    • A. B. Sproul, J. Appl. Phys. 0021-8979 76, 2851 (1994). 10.1063/1.357521
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.