Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Volumn , Issue , 2010, Pages 132-133

  Lee, Heng Yuan ^a,c   Chen, Yu Sheng ^a,c   Chen, Pang Shiu ^b   Gu, Pei Yi ^a   Hsu, Yen Ya ^a   Liu, Wen Hsin ^a   Chen, Wei Su ^a   Tsai, Chen Han ^a   Chen, Frederick ^a   Lien, Chen Hsin ^c   Tsai, Ming Jinn ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POLARITY; BINARY OXIDES; BOTTOM ELECTRODES; CONSTANT VOLTAGE; HIGH SPEED; HIGH TEMPERATURE; HIGH-RESISTANCE STATE; READ DISTURB; RELIABILITY MARGIN; RESISTIVE MEMORIES; ROOM TEMPERATURE; STACKED LAYER; TRANSITION-METAL OXIDES; WEIBULL SLOPE;

TITANIUM;

TRANSITION METAL COMPOUNDS;

EID: 77957904924     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2010.5488918     Document Type: Conference Paper

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