Ti/HfO2 based RRAM operation voltage scaling for embedded memory

ECS Transactions

Volumn 52, Issue 1, 2013, Pages 39-44

  Tsai, C H ^a   Chen, F T ^a   Lee, H Y ^a   Chen, Y S ^a   Tsai, K H ^a   Wu, T Y ^a   Rahaman, S Z ^a   Gu, P Y ^a   Chen, W S ^a   Chen, P S ^b   Lin, Z H ^a   Tseng, P L ^a   Lin, W P ^a   Lin, C H ^a   Sheu, S S ^a   Tsai, M J ^a   Ku, T K ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED MEMORY TECHNOLOGIES; HIGH CELL DENSITY; LOW VOLTAGE OPERATION; LOWER-POWER CONSUMPTION; OPERATION STRATEGY; OPERATION VOLTAGE; RESISTIVE RANDOM-ACCESS MEMORY; STANDBY POWER CONSUMPTION;

CMOS INTEGRATED CIRCUITS; DATA HANDLING; FLASH MEMORY; SEMICONDUCTOR DEVICE MANUFACTURE; STORAGE ALLOCATION (COMPUTER);

RANDOM ACCESS STORAGE;

EID: 84875931643     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05201.0039ecst     Document Type: Conference Paper

References (8)

1. H. Y. Lee et al., IEDM Tech. Digest, 297 (2008).
2. C-H. Ho et al., IEDM Tech. Digest, 436 (2010).
3. H. Y. Lee et al., IEDM Tech. Digest, 460 (2010).
4. F. T. Chen et al., Sci. China Inf. Sci., 54, 1073 (2011).
5. F. T. Chen et al., ECS Trans., 44(1), 73 (2012).
6. Y. S. Chen et al., IEDM Tech. Digest, 105 (2009).
7. H. Y. Lee et al., to be published, VLSI-TSA (2013).
8. S. S. Sheu et al., Symp.VLSI Circuits Digest, 82 (2009).