Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2013, Pages

  Franco, J ^a   Kaczer, B ^a   Toledano Luque, M ^a   Roussel, Ph J ^a   Groeseneken, G ^a,c   Schwarz, B ^b   Bina, M ^b   Waltl, M ^b   Wagner, P J ^b   Grasser, T ^b  

^a IMEC   (Belgium)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Body Bias; Nanoscale; Negative Bias Temperature Instability; pMOSFETs; Variability

Indexed keywords

BODY BIAS; NANO SCALE; NEGATIVE BIAS TEMPERATURE INSTABILITY; P-MOSFETS; VARIABILITY;

GATE DIELECTRICS;

MOSFET DEVICES;

EID: 84880982123     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2013.6531958     Document Type: Conference Paper

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