Forward body biasing as a bulk-Si CMOS technology scaling strategy

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2657-2664

  Hokazono, Akira ^a,b   Balasubramanian, Sriram ^a   Ishimaru, Kazunari ^c   Ishiuchi, Hidemi ^b   Hu, Chenming ^a   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b TOSHIBA CORPORATION   (Japan)

^c Semiconductor Company   (Japan)

Author keywords

Body bias; Forward body bias; MOSFET; Retrograde channel doping profile; Reverse body bias; Steep channel doping profile; Substrate bias; Work function

Indexed keywords

SILICON;

BODY BIAS; FORWARD BODY BIAS; MOSFET; RETROGRADE CHANNEL DOPING PROFILE; REVERSE BODY BIAS; STEEP CHANNEL DOPING PROFILE; SUBSTRATE BIAS; WORK FUNCTION;

CMOS INTEGRATED CIRCUITS;

EID: 53649095027     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003029     Document Type: Article

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