Performance and stability of aerosol-jet-printed electrolyte-gated transistors based on poly(3-hexylthiophene)

ACS Applied Materials and Interfaces

Volumn 5, Issue 14, 2013, Pages 6580-6585

  Kim, Se Hyun ^a,b   Hong, Kihyon ^a   Lee, Keun Hyung ^a   Frisbie, C Daniel ^a  

^a University of Minnesota   (United States)

^b Yeungnam University   (South Korea)

Author keywords

aerosol jet printing; device stability; electrochemical transistor; electrolyte gating; ion gel; poly(3 hexylthiophene)

Indexed keywords

AEROSOL JET PRINTINGS; DEVICE STABILITY; ELECTROCHEMICAL TRANSISTORS; ION GELS; POLY (3-HEXYLTHIOPHENE);

AEROSOLS; CARRIER MOBILITY; ELECTROLYTES; OPTIMIZATION; STRESSES;

TRANSISTORS;

EID: 84880819405     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am401200y     Document Type: Article

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