Flexible low-voltage electric-double-layer TFTs self-assembled on paper substrates

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 518-520

  Lu, Aixia ^a,b   Dai, Mingzhi ^a   Sun, Jia ^a   Jiang, Jie ^a   Wan, Qing ^a,b  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b HUNAN UNIVERSITY   (China)

Author keywords

Flexible electric double layer (EDL) transistors; one mask self assembled; paper electronics

Indexed keywords

DEPLETION MODES; DEVICE SIMULATORS; DOUBLE LAYERS; ELECTRICAL BEHAVIORS; ELECTRICAL PERFORMANCE; EXPERIMENTAL DATA; FLEXIBLE ELECTRIC-DOUBLE-LAYER (EDL) TRANSISTORS; HIGH CURRENTS; HIGH MOBILITY; LOW-VOLTAGE; MECHANICAL BENDING; MICROPOROUS; ON/OFF RATIO; ONE-MASK SELF-ASSEMBLED; OPERATION VOLTAGE; PAPER ELECTRONICS; PAPER SUBSTRATE; ROOM TEMPERATURE; SELF-ASSEMBLED; SHADOW MASK; SUBTHRESHOLD SWING;

GATE DIELECTRICS; GATES (TRANSISTOR); PAPER; SILICON COMPOUNDS; SOLID ELECTROLYTES; THIN FILM TRANSISTORS;

FLEXIBLE ELECTRONICS;

ELECTROLYTES; ELECTRONICS; PAPER; SILICON COMPOUNDS; THIN FILMS; TRANSISTORS;

EID: 79953038974     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2107550     Document Type: Article

References (12)

1. E. Fortunato, N. Correia, P. Barquinha, L. Pereira, G. Gonçalves, and R. Martins, "High-performance flexible hybrid field-effect transistors based on cellulose fiber paper," IEEE Electron Device Lett., vol. 29, no. 9, pp. 988-990, Sep. 2008.
2. W. Lim, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, Y.-W. Heo, S. Y. Son, and J. H. Yuh, "Low-voltage indium gallium zinc oxide thin film transistors on paper substrates," Appl. Phys. Lett., vol. 96, no. 5, pp. 053 510-1-053 510-3, Feb. 2010.
3. Y.-H. Kim, D.-G. Moon, and J.-I. Han, "Organic TFT array on a paper substrate," IEEE Electron Device Lett., vol. 25, no. 10, pp. 702-704, Oct. 2004.
4. R.Martins, P. Barquinha, L. Pereiar, N. Correia, G. Gonçalves, I. Ferreira, and E. Fortunato, "Write-erase and read paper memory transistor," Appl. Phys. Lett., vol. 93, no. 20, pp. 203 501-1-203 501-3, Nov. 2008.
5. W. Lim, E. A. Douglas, S.-H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, andW. H. Chang, "Highmobility InGaZnO4 thin-film transistors on paper," Appl. Phys. Lett., vol. 94, no. 7, pp. 072 103-1-072 103-3, Feb. 2009.
6. J. Sun, Q. Wan, A. Lu, and J. Jiang, "Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature," Appl. Phys. Lett., vol. 95, no. 22, pp. 222 108-1-222 108-3, Nov. 2009.
7. A. Lu, J. Sun, J. Jiang, and Q. Wan, "One-shadow-mask self-assembled ultralow-voltage coplanar homojunction thin-film transistors," IEEE Electron Device Lett., vol. 31, no. 10, pp. 1137-1139, Oct. 2010.
8. K. D. Kim and C. K. Song, "Low voltage pentacene thin film transistors employing a self-grown metal-oxide as a gate dielectric," Appl. Phys. Lett., vol. 88, no. 23, pp. 233 508-1-233 508-13, Jun. 2006.
9. D. H. Kim, N. G. Cho, H. G. Kim, H. S. Kim, J. M. Hong, and I. D. Kim, "Low voltage operating InGaZnO4 thin film transistors using high-k MgO-Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate," Appl. Phys. Lett., vol. 93, no. 3, pp. 032 901-1-032 901-3, Jul. 2008.
10. H. T. Yuan, H. Shimotani, A. Tsukazaki, A. Ohtomo, M. Kawasaki, and Y. Iwasa, "High-density carrier accumulation in ZnO field-effect transistors gated by electric double layers of ionic liquids," Adv. Funct. Mater., vol. 19, no. 7, pp. 1046-1053, Apr. 2009.
11. A. Lu, J. Sun, J. Jiang, andQ.Wan, "Microporous SiO2 with huge electricdouble-layer capacitance for low-voltage indium tin oxide thin-film transistors," Appl. Phys. Lett., vol. 95, no. 22, pp. 222 905-1-222 905-3, Nov. 2009.
12. J. Kawamura, R. Sato, S. Mishina, and M. Shimoji, "AC conductivity of Li2O-Na2O-B2O3 mixed-alkali glasses: Analysis due to transition rate distribution," Solid State Ionics, vol. 25, no. 2/3, pp. 155-164, Nov. 1987. (Pubitemid 18559912)