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Volumn 52, Issue 4 PART 1, 2013, Pages

Impact of the electrical forming process on the resistance switching behaviors in lanthanum-doped strontium titanate ceramic chip devices

(6) Hirose, Sakyo a,b Niimi, Hideaki a Kageyama, Keisuke a Ando, Akira a Ieki, Hideharu a Omata, Takahisa b

a MURATA MANUFACTURING CO LTD (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CONDUCTION; DOUBLE SCHOTTKY BARRIERS; ELECTRON TRAPPING; RESISTANCE SWITCHING; RESISTANCE SWITCHING BEHAVIORS; SPACE-CHARGE DISTRIBUTION; THERMALLY STIMULATED CURRENT; VOLTAGE APPLICATIONS;

CERAMIC MATERIALS; DEFECTS; GRAIN BOUNDARIES; JOULE HEATING; SCHOTTKY BARRIER DIODES; STRONTIUM TITANATES;

SWITCHING;

EID: 84880786190 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.045802 Document Type: Article

Times cited : (4)

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