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Volumn 113, Issue 13, 2013, Pages

Effects of (P, N) dual acceptor doping on band gap and p-type conduction behavior of ZnO films

(12) Sui, Yingrui a Yao, Bin b Xiao, Li a Xing, Guozhong c Yang, Lili a Li, Xuefei a Li, Xiuyan a Lang, Jihui a Lv, Shiquan a Cao, Jian a Gao, Ming a Yang, Jinghai a

a JILIN NORMAL UNIVERSITY (China)

b JILIN UNIVERSITY (China)

c UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPING; HIGH QUALITY; IMPURITY BANDS; P-TYPE CONDUCTION; P-TYPE CONDUCTIVITY; POST ANNEALING; ROOM-TEMPERATURE RESISTIVITY; VALANCE BANDS;

ELECTRIC PROPERTIES; ENERGY GAP; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

ZINC OXIDE;

EID: 84880682378 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4798605 Document Type: Conference Paper

Times cited : (33)

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