Electrical properties of N-doped ZnO grown on sapphire by P-MBE

Semiconductor Science and Technology

Volumn 22, Issue 2, 2007, Pages 65-69

  Wang, X ^a,b   Lu, Y M ^a   Shen, D Z ^a   Zhang, Z Z ^a   Li, B H ^a   Yao, B ^a   Zhang, J Y ^a   Zhao, D X ^a   Fan, X W ^a   Tang, Z K ^c  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; HOLE MOBILITY; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; SAPPHIRE;

ACCEPTOR DEFECTS; DONORS; HOPPING CONDUCTION;

ZINC OXIDE;

EID: 34247240569     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/2/011     Document Type: Article

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