The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

Applied Physics Letters

Volumn 103, Issue 2, 2013, Pages

  Gerlach, D ^a   Wilks, R G ^a   Wippler, D ^b   Wimmer, M ^a   Lozac'H, M ^c   Felix R ^a   Muck A ^b   Meier, M ^b   Ueda, S ^c   Yoshikawa, H ^d   Gorgoi, M ^a   Lips, K ^a   Rech, B ^a   Sumiya, M ^c   Hupkes J ^b   Kobayashi, K ^e   Bar M ^a,f  

^a HAHN MEITNER INSTITUT   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d National Institute for Materials Science   (Japan)

^e JAPAN ATOMIC ENERGY AGENCY   (Japan)

^f BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER STACKS; ALUMINUM-DOPED ZINC OXIDE; DEVICE PERFORMANCE; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; JUNCTION BARRIER; OXIDE INTERFACES; THIN-FILM SOLAR CELLS; VALENCE BAND OFFSETS;

ALUMINUM; AMORPHOUS SILICON; ELECTRONIC STRUCTURE; PHOTOELECTRONS; SILICON; TUNNEL JUNCTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ZINC OXIDE;

EID: 84880496477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813448     Document Type: Article

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