Band discontinuity and band gap of MBE grown HgTe/CdTe(001) heterointerfaces studied by k-resolved photoemission and inverse photoemission

Physica Status Solidi (A) Applied Research

Volumn 173, Issue 1, 1999, Pages 261-267

  Eich, D ^a   Ortner, K ^a   Groh, U ^a   Chen, Z H ^a   Becker, C R ^a   Landwehr, G ^a   Fink, R ^a   Umbach, E ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BRILLOUIN SCATTERING; ENERGY GAP; EPITAXIAL GROWTH; MAGNETOOPTICAL EFFECTS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTONS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR SUPERLATTICES; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND GAP; HETEROINTERFACES; HETEROJUNCTION BAND DISCONTINUITIES; INVERSE PHOTOEMISSION; MERCURY TELLURIDE; VALENCE BAND OFFSET;

HETEROJUNCTIONS;

EID: 0033366092     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199905)173:1<261::AID-PSSA261>3.0.CO;2-#     Document Type: Article

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