P-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al thin-film solar cell structures-a comparative hard X-Ray photoelectron spectroscopy study

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 483-487

  Gerlach, D ^a   Wippler, D ^b   Wilks, R G ^a   Wimmer, M ^a   Lozac'H, M ^c   Felix R ^a   Ueda, S ^c   Yoshikawa, H ^c   Lips, K ^a   Rech, B ^a   Sumiya, M ^c   Kobayashi, K ^c   Gorgoi, M ^a   Hupkes J ^b   Bar M ^a,d  

^a HAHN MEITNER INSTITUT   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Hard X ray photoelectron spectroscopy (HAXPES); Si thin film solar cell; surface and interface analysis

Indexed keywords

A-SI:H; AUGER PARAMETERS; BANDBENDING; BURIED INTERFACE; CAPPING LAYER; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; OXIDE LAYER; P-TYPE; SURFACE AND INTERFACES; THIN-FILM SOLAR CELLS; X-RAY EXCITATION;

ALUMINUM; ELECTRONIC PROPERTIES; NANOSTRUCTURED MATERIALS; PHOTOELECTRONS; SOLAR CELLS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

SILICON;

EID: 84871742720     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2224644     Document Type: Article

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