Hard x-ray photoelectron spectroscopy study of the buried Si/ZnO thin-film solar cell interface: Direct evidence for the formation of Si-O at the expense of Zn-O bonds

Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

  Wimmer, M ^a   Br, M ^a   Gerlach, D ^a   Wilks, R G ^a   Scherf, S ^a   Lupulescu, C ^b   Ruske, F ^a   Felix R ^a   Hpkes, J ^c   Gavrila, G ^a   Gorgoi, M ^a   Lips, K ^a   Eberhardt, W ^a,b   Rech, B ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EXPERIMENTS; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; IN-SITU; OXYGEN SOURCES; SI OXIDATION; SILICON THIN FILM; SOLID-PHASE CRYSTALLIZATION; THIN-FILM SOLAR CELLS; TRANSPARENT CONDUCTIVE OXIDES; ZNO;

CONDUCTIVE FILMS; OXIDE FILMS; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 80054977400     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3644084     Document Type: Article

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