Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 9, 2009, Pages 2133-2138

  Noh, Jun Hong ^a   Cho, In Sun ^a   Lee, Sangwook ^a   Cho, Chin Moo ^a   Han, Hyun Soo ^a   An, Jae Sul ^a   Kwak, Chae Hyun ^a   Kim, Jin Yong ^b   Jung, Hyun Suk ^c   Lee, Jung Kun ^d   Hong, Kug Sun ^a  

^a Seoul National University   (South Korea)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c Kookmin University   (South Korea)

^d University of Pittsburgh   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; AL-DOPING; AS-GROWN; AZO FILMS; DEEP LEVEL EMISSION; ELECTRICAL PROPERTY; FREE EXCITONS; HYDROGEN ANNEALING; NEAR BAND EDGE EMISSIONS; NONRADIATIVE RECOMBINATION CENTERS; PHOTOLUMINESCENCE SPECTRUM; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; THERMAL QUENCHING; ZNO;

ACTIVATION ENERGY; ALUMINUM; CONDUCTIVE FILMS; CORUNDUM; DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FILM GROWTH; HYDROGEN; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; QUENCHING; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

EPITAXIAL FILMS;

EID: 70349162873     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881790     Document Type: Article

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