Window layer with p doped silicon oxide for high V oc thin-film silicon n-i-p solar cells

Journal of Applied Physics

Volumn 110, Issue 12, 2011, Pages

  Biron, Rémi ^a   Pahud, Celine ^a   Haug, Franz Josef ^a   Escarré, Jordi ^a   Söderström, Karin ^a   Ballif, Christophe ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; BACK REFLECTORS; BORON-DOPED; DILUTION RATIO; DOPED SILICON; INITIAL EFFICIENCY; INTRINSIC LAYER; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL GAP; OXYGEN CONTENT; P-LAYER; PLASTIC FOILS; SHORT WAVELENGTHS; SINGLE JUNCTION; TEXTURED SUBSTRATES; THIN FILM SILICON; TRANSPARENT CONDUCTIVE OXIDES; WINDOW LAYER;

ACTIVATION ENERGY; BORON; ELECTRIC PROPERTIES; NANOCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

SILICON OXIDES;

EID: 84855332764     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3669389     Document Type: Article

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