Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Bar M ^a   Wimmer, M ^a   Wilks, R G ^a   Roczen, M ^a   Gerlach, D ^a   Ruske, F ^a   Lips, K ^a   Rech, B ^a   Weinhardt, L ^b   Blum, M ^b,c   Pookpanratana, S ^c   Krause, S ^c   Zhang, Y ^c   Heske, C ^c   Yang, W ^d   Denlinger, J D ^d  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c UNIVERSITY OF NEVADA   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; BEFORE AND AFTER; CHEMICAL INTERACTIONS; CHEMICAL INTERFACES; CHEMICAL STRUCTURE; CLOSE PROXIMITY; EFFECTIVE THICKNESS; HYDROGENATED AMORPHOUS SILICON; INDUCED PHASE TRANSITION; PHOSPHORUS-DOPED; POLY-CRYSTALLINE SILICON; SOFT X RAY EMISSION SPECTROSCOPY; SOLID-PHASE CRYSTALLIZATION; THIN FILM SOLAR CELLS;

AMORPHOUS FILMS; CRYSTALLIZATION; EMISSION SPECTROSCOPY; OXIDE FILMS; PHASE INTERFACES; PHASE TRANSITIONS; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; THIN FILMS; ZINC; ZINC OXIDE;

AMORPHOUS SILICON;

EID: 77956021408     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462316     Document Type: Article

References (16)

1. Y. Igarashi, T. Yamaji, and S. Nishikawa, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 29, L2337 (1990). 10.1143/JJAP.29.L2337
2. M. J. Keevers, T. L. Young, U. Schubert, and M. A. Green, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 3-7 September 2007, p. 1783.
3. C. Becker, F. Ruske, T. Sontheimer, B. Gorka, U. Bloeck, S. Gall, and B. Rech, J. Appl. Phys. JAPIAU 0021-8979 106, 084506 (2009). 10.1063/1.3240343
4. K. Y. Lee, C. Becker, M. Muske, F. Ruske, S. Gall, B. Rech, M. Berginski, and J. Hüpkes, Appl. Phys. Lett. APPLAB 0003-6951 91, 241911 (2007) 10.1063/1.2824456;
5. F. Ruske, M. Roczen, K. Lee, M. Wimmer, S. Gall, J. Hupkes, D. Hrunski, and B. Rech, J. Appl. Phys. JAPIAU 0021-8979 107, 013708 (2010). 10.1063/1.3269721
6. J. -E. Rubensson, D. Mueller, R. Shuker, D. L. Ederer, C. H. Zhang, J. Jia, and T. A. Calcott, Phys. Rev. Lett. PRLTAO 0031-9007 64, 1047 (1990). 10.1103/PhysRevLett.64.1047
7. G. Wiech, H. -O. Feldhütter, and A. Šimnek, Phys. Rev. B PLRBAQ 0556-2805 47, 6981 (1993). 10.1103/PhysRevB.47.6981
8. J. A. Bearden, Rev. Mod. Phys. RMPHAT 0034-6861 39, 78 (1967). 10.1103/RevModPhys.39.78
9. 2 interlayer.
10. P. A. Bruhwiler and S. E. Shnatterly, Phys. Rev. B PLRBAQ 0556-2805 39, 12649 (1989). 10.1103/PhysRevB.39.12649
11. R. S. Crisp and D. Haneman, J. Phys.: Condens. Matter JCOMEL 0953-8984 3, 9637 (1991), and references therein. 10.1088/0953-8984/3/48/006
12. C. L. Dong, C. Persson, L. Vayssieres, A. Augustsson, T. Schmitt, M. Mattesini, R. Ahuja, C. L. Chang, and J. -H. Guo, Phys. Rev. B PLRBAQ 0556-2805 70, 195325 (2004). 10.1103/PhysRevB.70.195325
13. M. Bär, K. -S. Ahn, S. Shet, Y. Yan, L. Weinhardt, O. Fuchs, M. Blum, S. Pookpanratana, K. George, W. Yang, J. D. Denlinger, M. Al-Jassim, and C. Heske, Appl. Phys. Lett. APPLAB 0003-6951 94, 012110 (2009). 10.1063/1.3056638
14. E. Böhmer, F. Siebke, and H. Wagner, Fresenius' J. Anal. Chem. 358, 210 (1997). 10.1007/s002160050386 0937-0633
15. Y. Liu, J. -H. Hsieh, and S. K. Tung, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 46, 6068 (2007). 10.1143/JJAP.46.6068
16. U. Meier and C. Pettenkofer, Appl. Surf. Sci. ASUSEE 0169-4332 252, 1139 (2005). 10.1016/j.apsusc.2005.02.039