A 164 GHz hetero-integrated source in InP-on-BiCMOS technology

European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference

Volumn , Issue , 2013, Pages 244-247

  Jensen, T ^a   Al Sawaf, T ^a   Lisker, M ^b   Glisic, S ^b   Elkhouly, M ^b   Kraemer, T ^a   Ostermay, I ^a   Meliani, C ^b   Tillack, B ^b   Krozer, V ^a   Heinrich, W ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b IHP   (Germany)

Author keywords

Frequency doubler; Hetero integration; InP on BiCMOS; Millimeter wave circuits

Indexed keywords

BENZOCYCLOBUTENE; COMBINED CIRCUITS; FUNDAMENTAL FREQUENCIES; HETERO-INTEGRATION; INP-ON-BICMOS; MILLIMETER WAVE CIRCUITS; SEMICONDUCTOR TECHNOLOGY; VOLTAGE-CONTROLLED-OSCILLATOR;

BICMOS TECHNOLOGY; FREQUENCY DOUBLERS; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVE INTEGRATED CIRCUITS; OSCILLISTORS;

WAFER BONDING;

EID: 84893442140     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. S. Raman, T.H. Chang, C.L. Dohrman, M.J. Rosker, The DARPA COSMOS program: The convergence of InP and silicon CMOS technologies for high-performance mixed-signal, International Conference on Indium Phosphide & Related Materials (IPRM), 2010
2. T.E. Kazior, et al., A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates, IEEE Microwave Symposium Tech. Dig., pp. 1113-1116,2009
3. W. E. Hoke, et al. Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit, J. Vac. Sci. Tech. B 30(2), pp. 02B101-1-6, 2012
4. T. Kraemer, M. Rudolph, F. J. Schmueckle, J. Wuerfl, and G. Traenkle, InP DHBT process in transferred substrate technology with ft and fmax over 400 GHz, IEEE Trans. Electron Devices, vol. 56, no. 9, pp. 1897-1903, Sept. 2009
5. I. Ostermay, F. Schmueckle, R. Doerner, A. Thies, M. Lisker, A. Trusch, E. Matthus, Y. Borokhovych, B. Tillack, W. Heinrich, T. Kraemer, V. Krozer, O. Krueger, T. Jensen, 200 GHz Interconnects for InP-on-BiCMOS Integration, International Microwave Symposium 2013
6. R. Kozhuharov, M. Bao, M. Gavell and H. Zirath, A W-And G-band MMIC Source Using InP HBT Technology, International Microwave Symposium 2012