High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Heinemann, B ^a   Barth, R ^a   Knoll, D ^a   Rucker H ^a   Tillack, B ^a   Winkler, W ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; ION IMPLANTATION; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

COLLECTOR SINKERS; DEEP TRENCHES; PNP TRANSISTORS;

BICMOS TECHNOLOGY;

EID: 34247236651     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S36     Document Type: Article

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