Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

  Hoke, W E ^a   Chelakara, R V ^a   Bettencourt, J P ^a   Kazior, T E ^a   Laroche, J R ^a   Kennedy, T D ^a   Mosca, J J ^a   Torabi, A ^a   Kerr, A J ^a   Lee, H S ^b   Palacios, T ^b  

^a RAYTHEON COMPANY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; FABRICATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MIRRORS; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; TRANSISTORS;

CURRENT-MIRROR CIRCUITS; DEVICE LAYERS; DIRECT CURRENT MEASUREMENT; DRAIN BIAS; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GROWTH CONDITIONS; HIGH YIELD; MAXIMUM POWER; MICROWAVE LOSS; MONOLITHIC INTEGRATION; MONOLITHICALLY INTEGRATED; PLASMA MOLECULAR BEAM EPITAXY; QUIESCENT CURRENTS; SILICON CMOS; SILICON DEVICES; SILICON ON INSULATOR WAFERS; SMALL SIGNAL GAIN; SUBSTRATE SURFACE; WIRE GROWTH;

SILICON WAFERS;

EID: 84861637791     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3665220     Document Type: Article

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