Observation of negative contact resistances in graphene field-effect transistors

Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

  Nouchi, Ryo ^a,b   Saito, Tatsuya ^a   Tanigaki, Katsumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AG CONTACTS; CARRIER DOPING; CHARGE NEUTRALITY; DIP STRUCTURES; DOPING EFFECTS; METAL CONTACTS; MODEL CALCULATIONS; NEGATIVE R; POTENTIAL VARIATIONS; TRANSMISSION LINE MODELS;

CONTACT RESISTANCE; FIELD EFFECT TRANSISTORS; TRANSMISSION LINE THEORY;

GRAPHENE;

EID: 84860520166     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4705367     Document Type: Article

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