Fully transparent resistive memory employing graphene electrodes for eliminating undesired surface effects

Proceedings of the IEEE

Volumn 101, Issue 7, 2013, Pages 1732-1739

  Yang, Po Kang ^a   Chang, Wen Yuan ^a   Teng, Po Yuan ^b   Jeng, Shuo Fang ^b,c   Lin, Su Jien ^b   Chiu, Po Wen ^b   He, Jr Hau ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c Research and Development Center   (Taiwan)

Author keywords

Graphene; resistive switching; surface effect; transparent resistance random access memory (TRRAM)

Indexed keywords

GRAPHENE; GRAPHITE ELECTRODES; II-VI SEMICONDUCTORS; RANDOM ACCESS STORAGE; SWITCHING; ZINC OXIDE;

DEVICE RELIABILITY; GRAPHENE ELECTRODES; HIGH-RESISTANCE STATE; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE VARIATIONS; RESISTIVE SWITCHING; SURFACE EFFECT; SWITCHING PARAMETERS;

GRAPHENE DEVICES;

EID: 84879887984     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2013.2260112     Document Type: Article

References (38)

1. M. Osada and T. Sasaki, "Two-dimensional dielectric nanosheets: Novel nanoelectronics from nanocrystal building blocks," Adv. Mater., vol. 24, pp. 210-228, Jan. 2012.
2. Y. Shi, C. Hamsen, X. Jia, K. K. Kim, A. Reina, M. Hofmann, A. L. Hsu, K. Zhang, H. Li, Z. Y. Juang, M. S. Dresselhaus, L. J. Li, and J. Kong, "Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition," Nano Lett., vol. 10, pp. 4134-4139, Sep. 2010.
3. C. Y. Su, A. Y. Lu, C. Y. Wu, Y. T. Li, K. K. Liu, W. Zhang, S. Y. Lin, Z. Y. Juang, Y. L. Zhong, F. R. Chen, and L. J. Li, "Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition," Nano Lett., vol. 11, pp. 3612-3616, Aug. 2011.
4. B. Alemán, W. Regan, S. Aloni, V. Altoe, N. Alem, C. Girit, B. Geng, L. Maserati, M. Crommie, F. Wang, and A. Zettl, "Transfer-free batch fabrication of large-area suspended graphene membranes," ACS Nano, vol. 4, pp. 4762-4768, Jul. 2010.
5. H. Medina, Y. C. Lin, D. Obergfell, and P. W. Chiu, "Tuning of charge densities in graphene by molecule doping," Adv. Funct. Mater., vol. 21, pp. 2687-2692, Jul. 2011.
6. Y. Shi, K. K. Kim, A. Reina, M. Hofmann, L. J. Li, and J. Kong, "Work function engineering of graphene electrode via chemical doping," ACS Nano, vol. 4, pp. 2689-2694, Apr. 2010.
7. L. Gomez De Arco, Y. Zhang, C. W. Schlenker, K. Ryu, M. E. Thompson, and C. Zhou, "Continuous, highly flexible transparent graphene films by chemical vapor deposition for organic photovoltaics," ACS Nano, vol. 4, pp. 2865-2873, May 2010.
8. P. Avouris, "Graphene: Electronic and photonic properties and devices," Nano Lett., vol. 10, pp. 4285-4294, Sep. 2010.
9. X.Wang, L. Zhi, and K.Mullen, "Transparent, conductive graphene electrodes for dye-sensitized solar cells," Nano Lett., vol. 8, pp. 323-327, Nov. 2008. (Pubitemid 351177822)
10. J. Wu, M. Agrawal, H. Becerril, Z. Bao, Z. Liu, Y. Chen, and P. Peumans, "Organic light-emitting diodes on solution-processed graphene transparent electrodes," ACS Nano, vol. 4, pp. 43-48, Nov. 2009.
11. Y. Shi, W. Fang, K. Zhang, W. Zhang, and L. J. Li, "Work function engineering of graphene electrode via chemical doping," Small, vol. 5, pp. 2005-2011, Sep. 2009.
12. S. Bae, H. Kim, Y. Lee, X. Xu, J. S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H. R. Kim, Y. Song, Y. J. Kim, K. S. Kim, B. Ozyilmaz, J. H. Ahn, B. H. Hong, and S. Iijima, "Roll-to-roll production of 30-inch graphene films for transparent electrodes," Nature Nanotechnol., vol. 5, pp. 574-578, Aug. 2010.
13. J. W. Seo, J. W. Park, K. S. Lim, J. H. Yang, and S. J. Kang, "Transparent resistive random access memory and its characteristics for nonvolatile resistive switching," Appl. Phys. Lett., vol. 93, Dec. 2008, 223505.
14. L. K. Yeh, K. Y. Lai, G. J. Lin, P. H. Fu, H. C. Chang, C. A. Lin, and J. H. He, "Giant efficiency enhancement of GaAs solar cells with graded antireflection layers based on syringe like ZnO nanorod arrays," Adv. Energy Mater., vol. 1, pp. 506-510, Jul. 2011.
15. Y. D. Chiang, W. Y. Chang, C. Y. Ho, C. Y. Chen, C. H. Ho, S. J. Lin, T. B. Wu, and J. H. He, "Single-ZnO-nanowire memory," IEEE Trans. Electron Devices, vol. 58, no. 6, pp. 1735-1740, Jun. 2011.
16. W. Y. Chang, C. A. Lin, J. H. He, and T. B. Wu, "Resistive switching behaviors of ZnO nanorod layers," Appl. Phys. Lett., vol. 96, Jun. 2010, 242109.
17. J. J. Ke, Z. J. Liu, C. F. Kang, S. J. Lin, and J. H. He, "Surface effect on resistive switching behaviors of ZnO," Appl. Phys. Lett., vol. 99, Jun. 2011, 192106.
18. J. H. He, C. H. Ho, and C. Y. Chen, "Polymer functionalized ZnO nanobelts as oxygen sensors with a significant response enhancement," Nanotechnology, vol. 20, Jan. 2009, 065503.
19. M. W. Chen, C. Y. Chen, D. H. Lien, Y. Ding, and J. H. He, "Photoconductive enhancement of single ZnO nanowire through localized Schottky effects," Opt. Exp., vol. 18, Jul. 2010, 14836.
20. C. Y. Chen, J. R. D. Retamal, D. H. Lien, M. W. Chen, I. W. Wu, Y. Ding, Y. L. Chueh, C. I. Wu, and J. H. He, "Probing surface band bending of surface-engineered metal oxide nanowires," ACS Nano, vol. 6, pp. 9366-9372, Oct. 2012.
21. Q. H. Li, T. Gao, Y. G. Wang, and T. H. Wang, "Adsorption and desorption of oxygen probed from ZnO nanowire films by photocurrent measurements," Appl. Phys. Lett., vol. 86, Mar. 2005, 123117.
22. C. Y. Chen, C. A. Lin, and J. H. He, "ZnO/Al2O3 core-shell nanorod arrays: Growth, structural characterization, luminescent properties," Nanotechnology, vol. 20, Apr. 2009, 185605.
23. W. K. Hong, G. Jo, S. S. Kwon, S. Song, and T. Lee, "Electrical properties of surface-tailored ZnO nanowire field-effect transistors," IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3020-3029, Nov. 2008.
24. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memoriesVNanoionic mechanisms, prospects, challenges," Adv. Mater., vol. 21, pp. 2632-2663, Jul. 2009.
25. S. Yu, X. Guan, and H. S. P. Wong, "On the switching parameter variation of metal oxide RRAMVPart II: Model corroboration and device design strategy," IEEE Trans. Electron Devices, vol. 59, no. 4, pp. 1183-1189, Apr. 2012.
26. Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M. J. Tsai, "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity," in Int. Electron Devices Meeting Tech. Dig., 2009, DOI: 10.1109/IEDM.2009.5424411.
27. Y. C. Lin, C. Jin, J. C. Lee, S. F. Jen, K. Suenaga, and P. W. Chiu, "Clean transfer of graphene for isolation and suspension," ACS Nano, vol. 5, pp. 2362-2368, Feb. 2011.
28. F. Xia, T. Mueller, Y.M. Lin, A. V. Garcia, and P. Avouris, "Ultrafast graphene photodetector," Nature Nanotechnol., vol. 4, pp. 839-843, Oct. 2009.
29. Y. Chai, Y. Wu, K. Takei, H. Y. Chen, S. Yu, P. C. H. Chan, A. Javey, and H. S. P. Wong, "Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon," IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3933-3939, Nov. 2011.
30. Y. Chai, Y. Wu, K. Takei, H. Chen, S. Yu, P. C. H. Chan, A. Javey, and H. S. P. Wong, "Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory," in Int. Electron Devices Meeting Tech. Dig., 2010, DOI: 10.1109/IEDM.2010.5703328.
31. K. Mizuno, J. Ishii, H. Kishida, Y. Hayamizu, S. Yasuda, D. N. Futaba, M. Yumura, and K. Hata, "A black body absorber from vertically aligned single-walled carbon nanotubes," Proc. Nat. Acad. Sci., vol. 106, pp. 6044-6047, Jan. 2009.
32. A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, "Raman spectrum of graphene and graphene layers," Phys. Rev. Lett., vol. 97, Oct. 2006, 187401.
33. Y. Y. Wang, Z. H. Ni, T. Yu, Z. X. Shen, H. M. Wang, Y. H. Wu, W. Chen, and T. S. Wee, "Raman studies of monolayer graphene: The substrate effect," J. Phys. Chem. C, vol. 112, pp. 10637-10640, Jun. 2008.
34. Z. Fan, D. Wang, P. C. Chang, W. Y. Tseng, and J. G. Lu, "ZnO nanowire field effect transistor and oxygen sensing property," Appl. Phys. Lett., vol. 85, Dec. 2004, 5923.
35. C. Y. Chen, M. W. Chen, J. J. Ke, C. A. Lin, J. R. D. Retamal, and J. H. He, "Surface effects on optical and electrical properties of ZnO nanostructures," Pure Appl. Chem., vol. 82, pp. 2055-2073, Aug. 2010.
36. M. W. Chen, J. R. D. Retamal, C. Y. Chen, and J. H. He, "Photocarrier relaxation behavior of a single ZnO nanowire UV photodetector," IEEE Electron Device Lett., vol. 33, no. 3, pp. 411-413, Mar. 2012.
37. Y. Sato, K. Takai, and T. Enoki, "Electrically controlled adsorption of oxygen in bilayer graphene devices," Nano Lett., vol. 11, pp. 3468-3475, Jul. 2011.
38. K. Higuch, K. Miyaji, K. Johguchi, and K. Takeuchi, "Endurance enhancement and high speed set/reset of 50nm generation HfO2 based resistive random access memory cell by intelligent set/reset pulse shape optimization and verify scheme," Jpn. J. Appl. Phys., vol. 51, Feb. 2012, 02BD07.