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Volumn 51, Issue 2 PART 2, 2012, Pages

Endurance Enhancement and High Speed Set/Reset of 50nm Generation HfO 2 Based Resistive Random Access Memory Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL METHODS; FAILURE MECHANISM; MEASURED DATA; PHYSICAL MODEL; PULSE SHAPES; PULSE WIDTH; RESET PULSE; RESISTIVE RANDOM ACCESS MEMORY; SET VOLTAGE;

EID: 84857496841     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.02BD07     Document Type: Article
Times cited : (10)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.