-
1
-
-
84857460602
-
-
Y. Tamai, H. Shima, H. Muramatsu, H. Akinaga, Y. Hosoi, S. Ohnishi, and N. Awaya: Ext. Abstr. Solid State Devices and Materials, 2008, p. 1166.
-
(2008)
Ext. Abstr. Solid State Devices and Materials
, pp. 1166
-
-
Tamai, Y.1
Shima, H.2
Muramatsu, H.3
Akinaga, H.4
Hosoi, Y.5
Ohnishi, S.6
Awaya, N.7
-
2
-
-
70449393681
-
-
S. S. Sheu, P. C. Chiang, W. P. Lin, H. Y. Lee, P. S. Chen, Y. S. Chen, T. Y. Wu, F. T. Chen, K. L. Su, M. J. Kao, K. H. Cheng, and M. J. Tsai: Symp. VLSI Circuits, 2009, p. 82.
-
(2009)
Symp. VLSI Circuits
, pp. 82
-
-
Sheu, S.S.1
Chiang, P.C.2
Lin, W.P.3
Lee, H.Y.4
Chen, P.S.5
Chen, Y.S.6
Wu, T.Y.7
Chen, F.T.8
Su, K.L.9
Kao, M.J.10
Cheng, K.H.11
Tsai, M.J.12
-
3
-
-
79955726402
-
-
S. S. Sheu, M. F. Chang, K. F. Lin, C. W. Wu, Y. S. Chen, P. F. Chiu, C. C. Kuo, Y. S. Yang, P. C. Chiang, W. P. Lin, C. H. Lin, H. Y. Lee, P. Y. Gu, S. M. Wang, F. T. Chen, K. L. Su, C. H. Lien, K. H. Cheng, H. T. Wu, T. K. Ku, M. J. Kao, and M. J. Tsai: IEEE Int. Solid-State Circuits Conf. Dig. Tech. Pap., 2011, p. 200.
-
(2011)
IEEE Int. Solid-State Circuits Conf. Dig. Tech. Pap.
, pp. 200
-
-
Sheu, S.S.1
Chang, M.F.2
Lin, K.F.3
Wu, C.W.4
Chen, Y.S.5
Chiu, P.F.6
Kuo, C.C.7
Yang, Y.S.8
Chiang, P.C.9
Lin, W.P.10
Lin, C.H.11
Lee, H.Y.12
Gu, P.Y.13
Wang, S.M.14
Chen, F.T.15
Su, K.L.16
Lien, C.H.17
Cheng, K.H.18
Wu, H.T.19
Ku, T.K.20
Kao, M.J.21
Tsai, M.J.22
more..
-
4
-
-
78649367980
-
-
Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M. J. Tsai: IEDM Tech. Dig., 2009, p. 105.
-
(2009)
IEDM Tech. Dig.
, pp. 105
-
-
Chen, Y.S.1
Lee, H.Y.2
Chen, P.S.3
Gu, P.Y.4
Chen, C.W.5
Lin, W.P.6
Liu, W.H.7
Hsu, Y.Y.8
Sheu, S.S.9
Chiang, P.C.10
Chen, W.S.11
Chen, F.T.12
Lien, C.H.13
Tsai, M.J.14
-
5
-
-
79955715103
-
-
H. Y. Lee, Y. S. Chen, P. S. Chen, P. Y. Gu, Y. Y. Hsu, S. M. Wang, W. H. Liu, C. H. Tsai, S. S. Sheu, P. C. Chiang, W. P. Lin, C. H. Lin, W. S. Chen, F. T. Chen, C. H. Lien, and M. J. Tsai: IEDM Tech. Dig., 2010, p. 460.
-
(2010)
IEDM Tech. Dig.
, pp. 460
-
-
Lee, H.Y.1
Chen, Y.S.2
Chen, P.S.3
Gu, P.Y.4
Hsu, Y.Y.5
Wang, S.M.6
Liu, W.H.7
Tsai, C.H.8
Sheu, S.S.9
Chiang, P.C.10
Lin, W.P.11
Lin, C.H.12
Chen, W.S.13
Chen, F.T.14
Lien, C.H.15
Tsai, M.J.16
-
6
-
-
80055005414
-
-
H. Kasai, S. M. Aspera, H. Kishi, N. Awaya, S. Ohnishi, and Y. Tamai: Int. Conf. on Simulation of Semiconductor Processes and Devices, 2011, p. 211.
-
(2011)
Int. Conf. on Simulation of Semiconductor Processes and Devices
, pp. 211
-
-
Kasai, H.1
Aspera, S.M.2
Kishi, H.3
Awaya, N.4
Ohnishi, S.5
Tamai, Y.6
-
7
-
-
84857471144
-
-
P. S. Chen, H. Y. Lee, Y. S. Chen, P. Y. Gu, F. Chen, and M. J. Tsai: Ext. Abstr. Solid State Devices and Materials, 2010, p. 319.
-
(2010)
Ext. Abstr. Solid State Devices and Materials
, pp. 319
-
-
Chen, P.S.1
Lee, H.Y.2
Chen, Y.S.3
Gu, P.Y.4
Chen, F.5
Tsai, M.J.6
-
8
-
-
77957923056
-
-
P. Y. Gu, Y. S. Chen, H. Y. Lee, P. S. Chen, W. H. Liu, W. S. Chen, Y. Y. Hsu, F. Chen, and M. J. Tsai: Symp. Int. Symp. VLSI Technology Systems and Applications, 2010, p. 146.
-
(2010)
Symp. Int. Symp. VLSI Technology Systems and Applications
, pp. 146
-
-
Gu, P.Y.1
Chen, Y.S.2
Lee, H.Y.3
Chen, P.S.4
Liu, W.H.5
Chen, W.S.6
Hsu, Y.Y.7
Chen, F.8
Tsai, M.J.9
-
9
-
-
79951843778
-
-
G. Bersuker, D. C. Gilmer, D. Veksler, J. Yum, H. Park, S. Lian, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, M. Nafria, W. Taylor, P. D. Kirsch, and R. Jammy: IEDM Tech. Dig., 2010, p. 456.
-
(2010)
IEDM Tech. Dig.
, pp. 456
-
-
Bersuker, G.1
Gilmer, D.C.2
Veksler, D.3
Yum, J.4
Park, H.5
Lian, S.6
Vandelli, L.7
Padovani, A.8
Larcher, L.9
McKenna, K.10
Shluger, A.11
Iglesias, V.12
Porti, M.13
Nafria, M.14
Taylor, W.15
Kirsch, P.D.16
Jammy, R.17
-
11
-
-
84857484903
-
-
K. Higuchi, K. Miyaji, K. Johguchi, and K. Takeuchi: Ext. Abstr. Solid State Devices and Materials, 2011, p. 1011.
-
(2011)
Ext. Abstr. Solid State Devices and Materials
, pp. 1011
-
-
Higuchi, K.1
Miyaji, K.2
Johguchi, K.3
Takeuchi, K.4
-
12
-
-
0002825013
-
-
K. D. Suh, Y. H. Um, J. K. Kim, Y. J. Choi, Y. N. Koh, S. S. Lee, S. C. Kwon, B. S. Choi, J. S. Yum, J. H. Choi, J. R. Kim, and H. K. Lim: IEEE Int. Solid-State Circuits Conf. Dig. Tech. Pap., 1995, p. 128.
-
(1995)
IEEE Int. Solid-State Circuits Conf. Dig. Tech. Pap.
, pp. 128
-
-
Suh, K.D.1
Um, Y.H.2
Kim, J.K.3
Choi, Y.J.4
Koh, Y.N.5
Lee, S.S.6
Kwon, S.C.7
Choi, B.S.8
Yum, J.S.9
Choi, J.H.10
Kim, J.R.11
Lim, H.K.12
-
13
-
-
79955742439
-
-
K. Fukuda, Y. Watanabe, E. Makino, K. Kawakami, J. Sato, T. Takagiwa, N. Kanagawa, H. Shiga, N. Tokiwa, Y. Shindo, T. Edahiro, T. Ogawa, M. Iwai, O. Nagao, J. Musha, T. Minamoto, K. Yanagidaira, Y. Suzuki, D. Nakamura, Y. Hosomura, H. Komai, Y. Furuta, M. Muramoto, R. Tanaka, G. Shikata, A. Yuminaka, K. Sakurai, M. Sakai, H. Ding, M. Watanabe, Y. Kato, T. Miwa, A. Mak, M. Nakamichi, G. Hemink, D. Lee, M. Higashitani, B. Murphy, B. Lei, Y. Matsunaga, K. Naruke, and T. Hara: IEEE Int. Solid-State Circuits Conf. Dig. Tech. Pap., 2011, p. 198.
-
(2011)
IEEE Int. Solid-State Circuits Conf. Dig. Tech. Pap.
, pp. 198
-
-
Fukuda, K.1
Watanabe, Y.2
Makino, E.3
Kawakami, K.4
Sato, J.5
Takagiwa, T.6
Kanagawa, N.7
Shiga, H.8
Tokiwa, N.9
Shindo, Y.10
Edahiro, T.11
Ogawa, T.12
Iwai, M.13
Nagao, O.14
Musha, J.15
Minamoto, T.16
Yanagidaira, K.17
Suzuki, Y.18
Nakamura, D.19
Hosomura, Y.20
Komai, H.21
Furuta, Y.22
Muramoto, M.23
Tanaka, R.24
Shikata, G.25
Yuminaka, A.26
Sakurai, K.27
Sakai, M.28
Ding, H.29
Watanabe, M.30
Kato, Y.31
Miwa, T.32
Mak, A.33
Nakamichi, M.34
Hemink, G.35
Lee, D.36
Higashitani, M.37
Murphy, B.38
Lei, B.39
Matsunaga, Y.40
Naruke, K.41
Hara, T.42
more..
|