Photocarrier relaxation behavior of a single ZnO nanowire UV photodetector: Effect of surface band bending

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 411-413

  Chen, Ming Wei ^a   Retamal, Jose Ramon Duran ^a   Chen, Cheng Ying ^a   He, Jr Hau ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Nanowire (NW); photodetector; relaxation time; surface band bending (SBB); ZnO

Indexed keywords

ENHANCEMENT-MODE; PHOTOCARRIER; RELAXATION BEHAVIORS; SLOW RELAXATIONS; SURFACE BAND BENDING; SURFACE EFFECT; ULTRA-VIOLET; UV PHOTODETECTORS; ZNO; ZNO NANOWIRES;

FIELD EFFECT TRANSISTORS; NANOWIRES; PHOTODETECTORS; PHOTOELECTRICITY; RELAXATION TIME;

ZINC OXIDE;

EID: 84862777544     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2180012     Document Type: Article

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