High reliability amorphous oxide semiconductor thin-film transistors gated by buried thick aluminum

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 9-10, 2012, Pages 403-405

  Luo, Dongxiang ^a   Lan, Linfeng ^a   Xu, Miao ^a   Xu, Hua ^a   Li, Min ^a   Zou, Jianhua ^a   Tao, Hong ^a   Wang, Lei ^a   Peng, Junbiao ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Aluminium oxide; Indium zinc oxide; Oxide semiconductors; Thin film transistors

Indexed keywords

ALUMINIUM OXIDE; ALUMINUM OXIDES; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); GATE-BIAS STRESS; HIGH MOBILITY; HIGH RELIABILITY; HIGH RESOLUTION; INDIUM ZINC OXIDES; NEGATIVE PHOTORESISTS; OPERATION VOLTAGE; OXIDE SEMICONDUCTOR; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS;

FLAT PANEL DISPLAYS; GATE DIELECTRICS; OXIDES; PHOTORESISTS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

ALUMINUM;

EID: 84867121529     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201206303     Document Type: Article

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