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Volumn , Issue , 2013, Pages 1279-1286

Evaluation and application of 600V GaN HEMT in cascode structure

Author keywords

[No Author keywords available]

Indexed keywords

BUCK CONVERTERS; CASCODE STRUCTURE; DEPLETION MODES; FIGURE OF MERITS; HIGH FREQUENCY OPERATION; HIGH-FREQUENCY APPLICATIONS; PARASITIC INDUCTORS; PERFORMANCE BASED;

EID: 84879345743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2013.6520464     Document Type: Conference Paper
Times cited : (92)

References (21)
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  • 4
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    • Y. Wu, M. J. Mitos, M. Moore, and S. Heikman, "A 97.8% Efficient GaN HEMT boost converter with 300W output power at 1 MHz," IEEE Electron Device Letters, vol. 29, no. 8, pp. 824-826, Aug. 2008.
    • (2008) IEEE Electron Device Letters , vol.29 , Issue.8 , pp. 824-826
    • Wu, Y.1    Mitos, M.J.2    Moore, M.3    Heikman, S.4
  • 6
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    • Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT
    • May.
    • W. Chen, K. Wong, and K. J. Chen, "Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT," IEEE Electron Device Letters, vol. 30, no. 5, pp. 430-432, May. 2009.
    • (2009) IEEE Electron Device Letters , vol.30 , Issue.5 , pp. 430-432
    • Chen, W.1    Wong, K.2    Chen, K.J.3
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    • GaN power electronics for automotive applications
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    • Boutros, K.S.1    Chu, R.2    Hughes, B.3
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    • Mar.
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    • Ren, Y.1    Xu, M.2    Zhou, J.3    Lee, F.C.4
  • 18
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    • An insight into the switching process of power MOSFETs: An improved analytical losses model
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    • M. Rodriguez, A. Rodriguez, P. F. Miaja, D. G. Lamar, and J. S. Zuniga, "An insight into the switching process of power MOSFETs: an improved analytical losses model," IEEE Trans. Power Electron., vol. 25, no. 6, pp. 1626-1640, Jun. 2010.
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  • 19
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.