-
2
-
-
33847702858
-
New developments in gallium nitride and the impact on power electronics
-
M. A. Khan, G. Simin, S. G. Pytel, A. Monti, E. Santi, and J. L. Hudgins, "New developments in gallium nitride and the impact on power electronics," in proc. IEEE Power Electronics Specialists Conference, 2005, pp. 15-26.
-
(2005)
Proc. IEEE Power Electronics Specialists Conference
, pp. 15-26
-
-
Khan, M.A.1
Simin, G.2
Pytel, S.G.3
Monti, A.4
Santi, E.5
Hudgins, J.L.6
-
3
-
-
0001473741
-
AlGaN/GaN HEMTs - An overview of device operation and applications
-
Jun.
-
U. K. Mishra, P. Parikh, and Y. Wu, "AlGaN/GaN HEMTs - an overview of device operation and applications," Proceedings of the IEEE, vol. 90, no. 6, pp.1022-1031, Jun. 2002.
-
(2002)
Proceedings of the IEEE
, vol.90
, Issue.6
, pp. 1022-1031
-
-
Mishra, U.K.1
Parikh, P.2
Wu, Y.3
-
4
-
-
48649110633
-
A 97.8% efficient GaN HEMT boost converter with 300W output power at 1 MHz
-
Aug.
-
Y. Wu, M. J. Mitos, M. Moore, and S. Heikman, "A 97.8% Efficient GaN HEMT boost converter with 300W output power at 1 MHz," IEEE Electron Device Letters, vol. 29, no. 8, pp. 824-826, Aug. 2008.
-
(2008)
IEEE Electron Device Letters
, vol.29
, Issue.8
, pp. 824-826
-
-
Wu, Y.1
Mitos, M.J.2
Moore, M.3
Heikman, S.4
-
5
-
-
52349091694
-
Demonstration of resonant inverter circuit for electrodeless fluorescent lamps using high voltage GaN-HEMT
-
W. Saito, T. Domon, I. Omura, T. Nitta, Y. Kakiuchi, K. Tsuda, and M. Yamaguchi, "Demonstration of resonant inverter circuit for electrodeless fluorescent lamps using high voltage GaN-HEMT," in proc. IEEE Power Electronics Specialists Conference, 2008, pp. 3324-3329.
-
(2008)
Proc. IEEE Power Electronics Specialists Conference
, pp. 3324-3329
-
-
Saito, W.1
Domon, T.2
Omura, I.3
Nitta, T.4
Kakiuchi, Y.5
Tsuda, K.6
Yamaguchi, M.7
-
6
-
-
67349090180
-
Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT
-
May.
-
W. Chen, K. Wong, and K. J. Chen, "Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT," IEEE Electron Device Letters, vol. 30, no. 5, pp. 430-432, May. 2009.
-
(2009)
IEEE Electron Device Letters
, vol.30
, Issue.5
, pp. 430-432
-
-
Chen, W.1
Wong, K.2
Chen, K.J.3
-
7
-
-
79955765518
-
GaN-FET based dual active bridge DC-DC converter
-
D. Costinett, H. Nguyen; R. Zane, and D. Maksimovic, "GaN-FET based dual active bridge DC-DC converter," in proc. IEEE Applied Power Electronics Conference, 2010, pp 1425-1432.
-
(2010)
Proc. IEEE Applied Power Electronics Conference
, pp. 1425-1432
-
-
Costinett, D.1
Nguyen, H.2
Zane, R.3
Maksimovic, D.4
-
8
-
-
81855228718
-
A gallium-nitride switched-capacitor circuit using synchronous rectification
-
M. J. Scott, K. Zou, J. Wang, C. Chen, M. Su, and L. Chen, "A Gallium-Nitride switched-capacitor circuit using synchronous rectification," in proc. IEEE Energy Conversion Congress and Exposition, 2011, pp 2501-2505.
-
(2011)
Proc. IEEE Energy Conversion Congress and Exposition
, pp. 2501-2505
-
-
Scott, M.J.1
Zou, K.2
Wang, J.3
Chen, C.4
Su, M.5
Chen, L.6
-
9
-
-
81455139441
-
A 9 5 % efficient normally-off GaN-on-si HEMT hybrid-IC boost converter with 425-W output power at 1MHz
-
B. Hughes, Y. Y. Yoon, D. M. Zehnder, and K. S. Boutros, "A 9 5 % efficient normally-off GaN-on-Si HEMT hybrid-IC boost converter with 425-W output power at 1MHz," in proc. IEEE Compound Semiconductor Integrated Circuit Symposium, 2011, pp 1-3.
-
(2011)
Proc. IEEE Compound Semiconductor Integrated Circuit Symposium
, pp. 1-3
-
-
Hughes, B.1
Yoon, Y.Y.2
Zehnder, D.M.3
Boutros, K.S.4
-
10
-
-
84860195533
-
GaN HFET switching characteristics at 350V-20A and synchronous boost converter performance at 1MHz
-
B. Hughes, J. Lazar, S. Hulsey, D. Zehnder, D. Matic, and K. Boutros, "GaN HFET Switching Characteristics at 350V-20A and Synchronous Boost Converter Performance at 1MHz," in proc. IEEE Applied Power Electronics Conference, 2012, pp 2506-2508.
-
(2012)
Proc. IEEE Applied Power Electronics Conference
, pp. 2506-2508
-
-
Hughes, B.1
Lazar, J.2
Hulsey, S.3
Zehnder, D.4
Matic, D.5
Boutros, K.6
-
11
-
-
84860167135
-
High frequency DC-DC converter using GaN device
-
J. Delaine, P. Olivier, D. Frey, and K. Guepratte, "High frequency DC-DC converter using GaN device," in proc. IEEE Applied Power Electronics Conference, 2012, pp 1754-1761.
-
(2012)
Proc. IEEE Applied Power Electronics Conference
, pp. 1754-1761
-
-
Delaine, J.1
Olivier, P.2
Frey, D.3
Guepratte, K.4
-
12
-
-
84868530821
-
GaN power electronics for automotive applications
-
K. S. Boutros, R. Chu, and B. Hughes, "GaN power electronics for automotive applications," in proc. IEEE Energytech, 2012, pp 1-4.
-
(2012)
Proc. IEEE Energytech
, pp. 1-4
-
-
Boutros, K.S.1
Chu, R.2
Hughes, B.3
-
13
-
-
77953683419
-
GaN power transistors on si substrates for switching applications
-
N. Ikeda, Y. Niiyama, H. Kambayashi, Y. Sato, T. Nomura, S. Kato, and S. Yoshida, "GaN power transistors on Si substrates for switching applications," Proceedings of the IEEE, vol. 98, no. 7, pp.1151-1161, 2010.
-
(2010)
Proceedings of the IEEE
, vol.98
, Issue.7
, pp. 1151-1161
-
-
Ikeda, N.1
Niiyama, Y.2
Kambayashi, H.3
Sato, Y.4
Nomura, T.5
Kato, S.6
Yoshida, S.7
-
14
-
-
84860191588
-
Gallium nitride based 3D integrated non-isolated point of load module
-
D. Reusch, D. Gilham, Y. Su, and F. C. Lee, "Gallium Nitride based 3D integrated non-isolated point of load module," in proc. IEEE Applied Power Electronics Conference, 2012, pp 38-45.
-
(2012)
Proc. IEEE Applied Power Electronics Conference
, pp. 38-45
-
-
Reusch, D.1
Gilham, D.2
Su, Y.3
Lee, F.C.4
-
15
-
-
4944265144
-
Normally-off operation power AlGaN/GaN HFET
-
N. Ikeda, J. Li, and S. Yoshida, "Normally-off operation power AlGaN/GaN HFET," in proc. IEEE International Symposium on Power Semiconductor Devices&ICs, 2004, pp 369-372.
-
(2004)
Proc. IEEE International Symposium on Power Semiconductor Devices&ICs
, pp. 369-372
-
-
Ikeda, N.1
Li, J.2
Yoshida, S.3
-
16
-
-
72549116634
-
Normally-off operation GaN based MOSFETs for power electronics
-
Y. Niiyama, S. Ootomo, H. Kambayashi, N. Ikeda, T. Nomura, and S. Kato, "Normally-off operation GaN based MOSFETs for power electronics," in proc. IEEE Compound Semiconductor Integrated Circuit Symposium, 2009, pp 1-4.
-
(2009)
Proc. IEEE Compound Semiconductor Integrated Circuit Symposium
, pp. 1-4
-
-
Niiyama, Y.1
Ootomo, S.2
Kambayashi, H.3
Ikeda, N.4
Nomura, T.5
Kato, S.6
-
17
-
-
33644907456
-
Analytical loss model of power MOSFET
-
Mar.
-
Y. Ren, M. Xu, J. Zhou, and F. C. Lee, "Analytical loss model of power MOSFET," IEEE Trans. Power Electron., vol. 21, no. 2, pp. 310-319, Mar. 2006.
-
(2006)
IEEE Trans. Power Electron.
, vol.21
, Issue.2
, pp. 310-319
-
-
Ren, Y.1
Xu, M.2
Zhou, J.3
Lee, F.C.4
-
18
-
-
77953240162
-
An insight into the switching process of power MOSFETs: An improved analytical losses model
-
Jun.
-
M. Rodriguez, A. Rodriguez, P. F. Miaja, D. G. Lamar, and J. S. Zuniga, "An insight into the switching process of power MOSFETs: an improved analytical losses model," IEEE Trans. Power Electron., vol. 25, no. 6, pp. 1626-1640, Jun. 2010.
-
(2010)
IEEE Trans. Power Electron.
, vol.25
, Issue.6
, pp. 1626-1640
-
-
Rodriguez, M.1
Rodriguez, A.2
Miaja, P.F.3
Lamar, D.G.4
Zuniga, J.S.5
-
19
-
-
80051704849
-
Switching loss analysis considering parasitic loop inductance with current source drivers for buck converters
-
Jul.
-
Z. Zhang, J. Fu, Y. Liu, and P. C. Sen, "Switching Loss Analysis Considering Parasitic Loop Inductance With Current Source Drivers for Buck Converters" IEEE Trans. Power Electron., vol. 26, no. 7, pp. 1815-1819, Jul. 2011.
-
(2011)
IEEE Trans. Power Electron.
, vol.26
, Issue.7
, pp. 1815-1819
-
-
Zhang, Z.1
Fu, J.2
Liu, Y.3
Sen, P.C.4
-
20
-
-
79955771734
-
A high frequency core loss measurement method for arbitrary excitations
-
M. Mu, F. C. Lee, Q. Li, D. Gillham, and K. Ngo, "A high frequency core loss measurement method for arbitrary excitations," in proc. IEEE Applied Power Electronics Conference, 2011, pp 157-162.
-
(2011)
Proc. IEEE Applied Power Electronics Conference
, pp. 157-162
-
-
Mu, M.1
Lee, F.C.2
Li, Q.3
Gillham, D.4
Ngo, K.5
-
21
-
-
33749526527
-
Optimal design methodology for LLC resonant converter
-
B. Lu, W. Liu, Y. Liang, F. C. Lee, and J. D. Wyk, "Optimal design methodology for LLC resonant converter," in proc. IEEE Applied Power Electronics Conference, 2006, pp 533-538.
-
(2006)
Proc. IEEE Applied Power Electronics Conference
, pp. 533-538
-
-
Lu, B.1
Liu, W.2
Liang, Y.3
Lee, F.C.4
Wyk, J.D.5
|