A gallium-nitride switched-capacitor circuit using synchronous rectification

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

Volumn , Issue , 2011, Pages 2501-2505

  Scott, Mark J ^a   Zou, Ke ^a   Wang, Jin ^a   Chen, Chingchi ^b   Su, Ming ^b   Chen, Lihua ^b  

^a The Ohio State University   (United States)

^b FORD MOTOR COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; BIPOLAR JUNCTION TRANSISTOR; PHYSICAL CHARACTERISTICS; SWITCHED CAPACITOR CIRCUITS; SWITCHING SPEED; SYNCHRONOUS RECTIFICATION; WIDE BAND-GAP MATERIAL;

ALUMINUM GALLIUM NITRIDE; BIPOLAR TRANSISTORS; CAPACITORS; ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; ENERGY CONVERSION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TRANSISTORS; TUNNEL DIODES;

ELECTRIC RECTIFIERS;

EID: 81855228718     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6064101     Document Type: Conference Paper

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