GaN power electronics for automotive application

2012 IEEE Energytech, Energytech 2012

Volumn , Issue , 2012, Pages

  Boutros, Karim S ^a   Chu, Rongming ^a   Hughes, Brian ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

automotive applications; Gallium Nitride; GaN; GaN on Si; hetero structure field effect transistor; HFET; power switch

Indexed keywords

AUTOMOTIVE APPLICATIONS; GAN; GAN-ON-SI; HETERO-STRUCTURE FIELD-EFFECT-TRANSISTOR; HFET; POWER SWITCHES;

FIELD EFFECT TRANSISTORS; POWER ELECTRONICS; SILICON;

GALLIUM NITRIDE;

EID: 84868530821     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EnergyTech.2012.6304646     Document Type: Conference Paper

References (7)

1. K. Cheng et al., "AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility," Appl. Phys. Express, vol. 5, art no. 011002, 2012.
2. B. Hughes et al., "A 95% efficient normally-off GaN-on-Si HEMT Hybrid-IC boost-converter with 425W output power at 1MHz," Digest of the 2011 IEEE Compound Semiconductor Integrated Circuit Symposium, Waikolowa, HI, pp. 154-6, 2011.
3. R. Chu et al., "Normally-Off Insulating-Gate GaN-on-Silicon FET with On-Resistance of 55-mΩ and Breakdown Voltage of 450-V," Digest of the International Conference on Nitride Semiconductors, Glasgow, UK, 2011.
4. B. Hughes et al., "GaN HFET Switching Characteristics at 350V/20A and Synchronous Boost Converter Performance at 1MHz "Presented at APEC, Orlando, Fl, February 2012.
5. R. Chu et al., "1200-V Normally Off GaN-on-Si Field-Effect Transistors with Low Dynamic On-Resistance," IEEE Electron. Dev. Lett., vol. 32, no. 5, pp. 632-634, 2011.
6. http://www.nitronex.com/pdfs/MantechPaper2007.pdf
7. http://www.how2power.com/newsletters/1010/articles/H2PowerToday1010- design-EPC.pdf