GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2012, Pages 2506-2508

  Hughes, Brian ^a   Lazar, James ^a   Hulsey, Stephen ^a   Zehnder, Daniel ^a   Matic, Daniel ^a   Boutros, Karim ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOOST CONVERTER; DOUBLE PULSE; DRAIN VOLTAGE; DRIVE CIRCUITS; GAN HFET; GATE DRIVES; MOSFETS; OUTPUT POWER; PACKAGING TECHNIQUES; POWER SWITCHES; POWER SWITCHING APPLICATIONS; RISETIMES; SILICON MOSFET; SLEW RATE; SWITCHING CHARACTERISTICS; SWITCHING CONDITIONS; SWITCHING ENERGY; SWITCHING PERFORMANCE; SYNCHRONOUS SWITCHING;

EXHIBITIONS; GALLIUM NITRIDE; MOSFET DEVICES; POWER ELECTRONICS;

SWITCHING;

EID: 84860195533     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2012.6166174     Document Type: Conference Paper

References (8)

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