Growth behaviors of intermetallic compounds at Sn-3Ag-0.5Cu/Cu interface during isothermal and non-isothermal aging

Journal of Alloys and Compounds

Volumn 574, Issue , 2013, Pages 451-458

  Shen, Jun ^a   Zhao, Mali ^a   He, Peipei ^a   Pu, Yayun ^a  

^a CHONGQING UNIVERSITY   (China)

Author keywords

Equivalent aging time; Growth mechanisms; Isothermal aging; Morphology of intermetallic compound layer; Non isothermal aging

Indexed keywords

COPPER COMPOUNDS; GRAIN GROWTH; INTERMETALLICS; ISOTHERMS; SILVER; SOLDERING; SOLDERING ALLOYS; THERMAL CYCLING;

AGING TIME; GROWTH MECHANISMS; INTERMETALLIC COMPOUND LAYER; ISOTHERMAL AGING; NON-ISOTHERMAL AGING;

TIN;

EID: 84879249514     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.05.156     Document Type: Article

References (29)

1. R. R. Tummala, E. J. Rymaszewski, A. G. Klopfenstein, Microelectronics Packaging Handbook, second ed., Kluwer, Netherland, 1998.
2. M. Abtew, G. Selvaduray, Mater. Sci. Eng., R 27 (2000) 295-341.
3. I. Dutta, P. Kumar, G. Subbarayan, J. Min, Metals Mater. Soc. 61 (2009) 29-38.
4. J. Auersperg, Th. Winkler, D. Vogel, B. Michel, IEMT/IMC Proc. (1998) 290-295.
5. Jeong-Won Yoon, Bo-In Noh, Young-HoO Lee, Hyo-Soo Lee, Seung-Boo Jung, Microelectron. Reliab. 48 (2008) 1864-1874.
6. Y. C. Chan, Alex C. K. So, J. K. L. Lai, Mater. Sci. Eng., B 55 (1998) 5-13.
7. K. S. Kim, S. H. Huh, K. Suganuma, Mater. Sci. Eng., A 333 (2002) 106-114.
8. L. Zhang, S. Xue, Y. Chen, Z. Han, J. Wang, S. Yu, F. Lu, J. Rare Earth 27 (2009) 138-144.
9. P. J. Kay, C. A. Mackay, Trans. Inst. Met. Fin 54 (1976) 68-74.
10. K. N. Tu, R. D. Thompson, Acta Metall. 30 (1982) 947-952.
11. X. Q. Shi, H. L. J. Pang, W. Zhou, Z. P. Wang, Int. J. Fatigue 22 (2000) 217-228.
12. H. K. Kim, K. N. Tu, Phys. Rev. B 53 (1996) 16027-16034.
13. D. Ma, W. D. Wang, S. K. Lahiri, J. Appl. Phys. 91 (2002) 3312-3317.
14. Lihua Qi, Jihua Huang, Jing Niu, Long Yang, Yaorong Feng, Xingke Zhao, Hua Zhang, Microstructure changes and compound growth dynamic at lead-free/Cu interface under different conditions. in: ICEPT-HDP International Conference, 2009, pp. 1083-1087.
15. Wequn Peng, Eduardo Monlevade, Marco E. Marques, Microelectron. Reliab. 47 (2007) 2161-2168.
16. Luhua Xu, John H. L. Pang, Kithva H. Prakash, T. H. Low, IEEE T Compon Pack T 28 (2005) 408-414.
17. John H. L. Pang, Luhua Xu, X. Q. Shi, W. Zhou, S. L. Ngoh, J. Electron. Mater. 33 (2004) 1219-1226.
18. P. L. Tu, Y. C. Chan, K. C. Hung, J. K. L. Lai, Scripta Mater. 44 (2004) 317-323.
19. J. Shen, Y. C. Chan, S. Y. Liu, Acta Mater. 57 (2009) 5196-5206.
20. A. U. Telang, T. R. Bieler, Scripta Mater. 52 (2005) 1027-1031.
21. A. LaLonde, D. Emelander, J. Jeannette, C. Larson, W. Rietz, D. Swenson, D. W. Henderson, J. Electron. Mater. 33 (2004) 1545-1549.
22. Thomas R. Bieler, Hailong Jiang, Lawrence P. Lehman, Tim Kirkpatrick, Eric J. Cotts, Bala Nandagopal, IEEE T Compon Pack T. 31 (2008) 370-381.
23. S. S. Gorelik, Recrystallization in Metals and Alloys, MIR Publisher, Moscow, 1981.
24. Luhua Xu, John H. L. Pang, Intermetallic growth studies on SAC/ENIG and SAC/Cu-OSP lead-free solder joints, in: The 10th Intersociety Conference, 2006, pp. 1131-1136. (Pubitemid 44929609)
25. Paul T. Vianco, John J. Stephens, Jerome A. Rejent, IEEE Trans. CPMT-A 20 (1997) 478-490.
26. Guang Zeng, Songbai Xue, Liang Zhang, Lili Gao, Wei Dai, Jiadong Luo, J. Mater. Sci.: Mater. Electron. 21 (2010) 421-440.
27. H. L. J. Pang, K. H. Tan, X. Q. Shi, Z. P. Wang, Mater. Sci. Eng. A 307 (2001) 42-50.
28. Q. K. Zhang, Z. F. Zhang, J. Alloys Comp. 485 (2009) 853-861.
29. Y. H. Pao, IEEE Trans. Comp. Hybrids Manufact. Technol. 15 (1992) 559-570.