Low-temperature atomic layer deposition of tungsten using tungsten hexafluoride and highly-diluted silane in argon

Chemical Vapor Deposition

Volumn 19, Issue 4-6, 2013, Pages 161-166

  Kalanyan, Berç ^a   Losego, Mark D ^a   Oldham, Christopher J ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

Aluminum oxide; Atomic layer deposition; Process safety; Silane; Tungsten

Indexed keywords

ALUMINUM OXIDES; AUGER ELECTRON SPECTROSCOPIES (AES); COMPOSITIONAL ANALYSIS; DEPOSITION TEMPERATURES; LOWER TEMPERATURES; PRECURSOR MATERIALS; PROCESS SAFETY; SECONDARY ION MASS SPECTROSCOPIES (SIMS);

ARGON; AUGER ELECTRON SPECTROSCOPY; DEPOSITS; FILM GROWTH; FUNCTIONAL MATERIALS; GROWTH RATE; SECONDARY ION MASS SPECTROMETRY; SILANES; SILICON; TEMPERATURE; TUNGSTEN;

ATOMIC LAYER DEPOSITION;

EID: 84879223262     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.201307053     Document Type: Article

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