Effect of an in-situ H2 plasma pretreatment on the minority carrier lifetime of a-Si:H(i) passivated crystalline silicon

Energy Procedia

Volumn 27, Issue , 2012, Pages 412-418

  Granata, S N ^a,b   Bearda, T ^b   Dross, F ^b   Gordon, I ^b   Poortmans, J ^a,b   Mertens, R ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

Amorphous silicon; Hydrogen plasma; Surface passivation

Indexed keywords

EID: 84879107150     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.07.086     Document Type: Conference Paper

References (16)

1. T. Mishima, M. Taguchi, H. Sakata, and E. Maruyama, "Development status of high-efficiency HIT solar cells," Solar Energy Materials and Solar Cells, vol. 95, no. 1, pp. 18-21, 2011.
2. A. Descoeudres, L. Barraud, S. De Wolf, B. Strahm, D. Lachenal, C. Guérin, Z. Holman, F. Zicarelli, B. Demaurex, J. Seif, J. Holovsky, and C. Ballif, "Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment," Applied Physics Letters, vol. 99, no. 12, p. 123506, 2011.
3. J. Schmidt and A. G. Aberle, "Accurate method for the determination of bulk minority-carrier lifetimes of mono-and multicrystalline silicon wafers," J. Appl. Phys., vol. 81, no. 9, pp. 6186-6199, May 1997.
4. R. Rther and J. Livingstone, "Hydrogenated amorphous silicon: Hydrogen content, bonding configurations and morphology in sputter-deposited, in-chamber annealed thin films," Thin Solid Films, vol. 251, no. 1, pp. 30-35, 1994.
5. M. Kondo, S. De-Wolf, and H. Fujiwara, "Understanding of passivation mechanism in heterojunction c-Si solar cells," 2008.
6. L. Zhao, C. L. Zhou, H. L. Li, H. W. Diao, and W. J. Wang, "Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation," Solar Energy Materials and Solar Cells, vol. 92, no. 6, pp. 673-681, 2008.
7. S. J. Pearton, "Hydrogenated Amorphous Silicon, by R. A. Street, Cambridge University Press, Cambridge 1991, XIV, 417 pp., hardcover, 65. 00; ISBN 0-521-37156-2," Advanced Materials, vol. 4, no. 4, p. 306-306, 1992.
8. T. Jana, "Low temperature silicon oxide and nitride for surface passivation of silicon solar cells," Solar Energy Materials and Solar Cells, vol. 71, no. 2, pp. 197-211, 2002.
9. S. Lebib and P. Roca i Cabarrocas, "Effects of ion energy on the crystal size and hydrogen bonding in plasma-deposited nanocrystalline silicon thin films," Journal of Applied Physics, vol. 97, no. 10, p. 104334-104334-10, May 2005.
10. M. Niwano, M. Terashi, and J. Kuge, "Hydrogen adsorption and desorption on Si(100) and Si(111) surfaces investigated by in situ surface infrared spectroscopy," Surface Science, vol. 420, no. 1, pp. 6-16, 1999.
11. D. C. Marra, E. A. Edelberg, R. L. Naone, and E. S. Aydil, "Silicon hydride composition of plasma-deposited hydrogenated amorphous and nanocrystalline silicon films and surfaces," Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films, vol. 16, no. 6, pp. 3199-3210, Nov. 1998.
12. C.-M. Chiang, S. M. Gates, S. S. Lee, M. Kong, and S. F. Bent, "Etching, Insertion, and Abstraction Reactions of Atomic Deuterium with Amorphous Silicon Hydride Films," The Journal of Physical Chemistry B, vol. 101, no. 46, pp. 9537-9547, 1997.
13. Z.-H. Zhou, E. S. Aydil, R. A. Gottscho, Y. J. Chabal, and R. Reif, "Real-Time, In Situ Monitoring of Room-Temperature Silicon Surface Cleaning Using Hydrogen and Ammonia Plasmas," Journal of The Electrochemical Society, vol. 140, no. 11, pp. 3316-3321, 1993.
14. Y. J. Chabal, G. S. Higashi, K. Raghavachari, and V. A. Burrows, "Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology," Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films, vol. 7, no. 3, pp. 2104-2109, May 1989.
15. H. Bender, S. Verhaverbeke, M. Caymax, O. Vatel, and M. M. Heyns, "Surface reconstruction of hydrogen annealed (100) silicon," Journal of Applied Physics, vol. 75, no. 2, pp. 1207-1209, Jan. 1994.
16. H. Fujiwara, M. Kondo, and A. Matsuda, "Stress-Induced Nucleation of Microcrystalline Silicon from Amorphous Phase," Japanese Journal of Applied Physics, vol. 41, no. Part 1, No. 5A, pp. 2821-2828, 2002.